25 kW High Efficiency High Power Density Bi-directional T-type Inverter

CRD-25BDA6512N-K

The 25 kW bi-directional T-type inverter demonstrates the performance of Wolfspeed’s 650 V and 1200 V silicon carbide (SiC) MOSFETs within high power systems such as solar inverters, uninterruptible power supplies (UPS), EV fast chargers, HVDC applications, high power PSU for AI/datacenters and energy storage systems.

This reference design is offered as a comprehensive evaluation tool that can be used as a starting point for new SiC designs. It has two operating modes: inverter mode and power factor correction (PFC) mode.

This Design Accomplishes:

Peak efficiencies of >99% in both inverter and PFC mode
Power density of >6 kW/L

Inverter Mode Specifications:

DC Input Voltage: 800V DC
Max current: 36A
AC Output Voltage: 380-480V_line-line 50/60Hz
Max power: 25kW
Switching Frequency: 60kHz

PFC Mode Specifications:

Three Phase Input Voltage 380-480V_line-line 50/60Hz
Max current: 36A
Output DC Voltage: 650V → 900V; Max power 25kW
Switching Frequency: 60kHz

Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter

Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter

Knowledge Center

PowerMakers:
How Wolfspeed’s Fayetteville Team Turns Silicon Carbide Expertise into Customer Momentum

At our Fayetteville site, Ty McNutt and his team don’t just solve for specs —they rethink systems. That’s the difference between supplying parts and becoming the partner customers rely on.

Continue Reading Thought Leadership

Beyond Silicon’s Limits:
How High‑Voltage Silicon Carbide is Redefining Critical Power

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Wolfspeed’s 300 mm Silicon Carbide Technology as a Materials Foundation for Next-Generation AI and HPC Advanced Packaging

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Documents, Tools & Support

Block Diagram
Efficiency Results
Technical & Sales Documents
Tools & Support

Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K

Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

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