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25 kW High Efficiency High Power Density Bi-directional T-type Inverter

Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter
CRD-25BDA6512N-K
The 25 kW bi-directional T-type inverter demonstrates the performance of Wolfspeed’s 650 V and 1200 V silicon carbide (SiC) MOSFETs within high power systems such as solar inverters, uninterruptible power supplies (UPS), EV fast chargers, HVDC applications, high power PSU for AI/datacenters and energy storage systems. This reference design is offered as a comprehensive evaluation tool that can be used as a starting point for new SiC designs. It has two operating modes: inverter mode and power factor correction (PFC) mode.

This Design Accomplishes:

  • Peak efficiencies of >99% in both inverter and PFC mode
  • Power density of >6 kW/L

Inverter Mode Specifications:

  • DC Input Voltage: 800V DC
  • Max current: 36A
  • AC Output Voltage: 380-480Vline-line 50/60Hz
  • Max power: 25kW
  • Switching Frequency: 60kHz

PFC Mode Specifications:

  • Three Phase Input Voltage 380-480Vline-line 50/60Hz
  • Max current: 36A
  • Output DC Voltage: 650V → 900V; Max power 25kW
  • Max current: 36A
  • Switching Frequency: 60kHz
Applications
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Energy storage systems
  • EV fast charging
  • Industrial power supplies
What's Included

Design Files for:

  • Main board
Request Separately

Documents, Tools, & Support

Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
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650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
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