33kW ANPC Bi-Directional Converter

CRD-33FF12N-K

Note Coming Soon.

1500V DC bus solar applications are rapidly growing due to the higher efficiency and higher power levels required in modern installations. The design utilizes the 3-level ANPC topology to achieve high efficiency and power density using Wolfspeed’s new CMHSA 1200V discrete SiC MOSFETs. The design is built as a 33kW single phase leg as a building block for a 3-phase 100kW system. Each of the four main switch positions uses 3 discrete MOSFETs, while the neutral point clamping positions parallel two devices to achieve high power performance while minimizing system costs.

Specifications:

DC/AC and AC/DC bidirectional
Single Phase ANPC
High Power Density >6 kW/L
High Efficiency Design
- >99% Peak Efficiency in both inverter and PFC mode
DC-link Voltage range: 1100VDC-1500V DC
AC Input/Output:
- 380Vac
- 33kW max for PCS and Solar Inverter
Switching Frequency: 40kHz/60kHz

Wolfspeed Power Reference Design CRD-33FF12N-K 33kW ANPC Bi-Directional Converter

Wolfspeed Power Reference Design CRD-33FF12N-K 33kW ANPC Bi-Directional Converter

Applications

Solar Inverter
PCS

What's Included

Reference design files for:

Main board
Controller Board
Aux Power Board

Test results and design documentation

Request Separately

Request Firmware
Mechanical Specifications

Product Compatibility

Documents, Tools, & Support

Block Diagram
Technical & Sales Documents
Tools & Support

Block Diagram for Wolfspeed's 33kW ANPC Bi-Directional Converter

Block Diagram for Wolfspeed's 33kW ANPC Bi-Directional Converter

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

CMHSA040120K

1200 V, 47 mΩ, TO-247-4 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

CMHSA040120K

1200 V, 47 mΩ, TO-247-4 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

CMHSA040120K

1200 V, 47 mΩ, TO-247-4 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

CMHSA040120K

1200 V, 47 mΩ, TO-247-4 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0016120K

1200 V, 16 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0016120K

1200 V, 16 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

UCC5350MC

5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp

TMS320F280039

C2000 real time microcontroller MCU with digital control algorithms

Knowledge Center

Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

Register Now Webinars

Powerful Perspectives

Partnering for Maximum Impact: An Interview with Paul Wheeler

Continue Reading Thought Leadership

Breaking the Mold: Redefining What’s Possible Through Product Engineering 

Continue Reading Thought Leadership

Support

Technical SupportPower Applications Forum

Buy OnlineFind a Distributor

Request SamplesVisit the Sample Center