Automotive Qualified Discrete Silicon Carbide (SiC) MOSFETs in TSC (U2), TO-247-4, and TO-263-7 XL packages
Wolfspeed's newest family of 1200 V discrete SiC MOSFETs delivers unparalleled performance in onboard automotive applications. The E4MS family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, expanding the usable design space for the engineer to tune and optimize the performance in the application. The E4MS family provides improved Eon, Err, and Eoff losses compared to the E3M family of devices, while maintaining a low RDS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of onboard topologies.
In addition to improved switching performance, the E4MS family provides transient overvoltage capability, increased lifetime at elevated bus voltages, and wide gate voltage compatibility for simplified drop-in capability. As a part of the Automotive portfolio, the E4MS family utilizes AEC-Q101 qualification and is PPAP capable.
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
