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  • 1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

Wolfspeed's family of Automotive Qualified 1200 V, Gen 3+ SiC Bare Die MOSFETs
Wolfspeed’s Generation 3+ of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for applications in automotive drivetrain and motor drives.
  • Overview
  • Parametric Data
  • Product Details
  • Tools & Support
  • Overview
  • Parametric Data
  • Product Details
  • Tools & Support

Parametric Data

1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

No filters selected, showing all 3 products

1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
EPM3-1200-R013D
Active
1200 V
13 mΩ
160 A
226 pF
1259 nC
34 ns
175 °C
Gen 3+
Automotive
EPM3-1200-0014D1
Active
1200 V
14 mΩ
149 A
200 pF
1068 nC
31 ns
175 °C
Gen 3+
Automotive
EPM3-1200-R015D
Active
1200 V
15 mΩ
148 A
200 pF
1388 nC
34 ns
175 °C
Gen 3+
Automotive

End of Section

Product Details

Features

  • Automotive Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives

Benefits

  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design

Typical Applications

  • Automotive Drivetrain
  • Motor Drives
  • Solid State Circuit Breaker
  • Resonant Topologies

Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

8 Documents Available
Document Type
Document Name
Last Updated
Application Notes
PRD-09129: Mitigating Package Induced Failures
New
05/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
New
01/2025
Application Notes
PRD-07969: Sintering Considerations and the Die Top System
04/2024
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Product Catalog
Power Product Line Card
01/2025
Sales Sheets & Flyers
Wolfspeed Silicon Carbide Solutions for EV Inverters
03/2022
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025

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Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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