Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 5
Wolfspeed's family of automotive qualified 1200 V, Gen 5 SiC Bare Die MOSFETs
Gen 5 MOSFET technology achieves the utmost conduction efficiency for automotive customers, enabling to design more compact traction inverters, improve mileage per charge, and right-size costly EV batteries. Established on our commercially mature 200 mm manufacturing platform, these Gen 5 bare die devices provide customers with a low-risk path to market.
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Product SKU | Request Sample | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmin | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 1200 V | 7.6 mΩ | 200 A | 212 pF | 943 nC | 24 ns | -40 °C | 200 °C | Gen 5 | Automotive |
Knowledge Center
As AI scales, a greater lens is on the upstream power sources that are expected to keep up with rapidly expanding data center deployments. Amperesand is helping build the cornerstone of tomorrow’s grid by developing highly reliable, medium voltage (MV) SiC-based solid state transformers. Read more to learn how Amperesand and Wolfspeed partnered to make it happen.