Features
- Low On-State Resistance over Temperature
- Low Parasitic Capacitances
- Fast Diode with ultra low reverse recovery
- High Temperature Operation (Tj = 175°C)
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Recommended For New Design? |
---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM3-0650-0060A | 650 V | 60 mΩ | 37 A | 46 nC | 80 pF | 151 nC | 11 ns | 175 °C | Gen 3 | Yes |
Document Type | Document Name |
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Application Notes | |
Application Notes | |
Product Catalog | |
Sales Sheets & Flyers | |
Sales Terms | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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