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  • 1700 V Discrete Silicon Carbide MOSFETs
  • C2M1000170D

C2M1000170D

1700 V, 1000 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET
Download Data Sheet
Note Last Time Buy. Recommended replacement:C3M0900170D
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Featured Resources
  • Tools & Support
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

Display All SKUs in Product Family (8)

1700 V Discrete Silicon Carbide MOSFETs

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1700 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
C2M1000170D
Last Time Buy
1700 V
1000 mΩ
5 A
150 °C
TO-247-3
Industrial

End of Section

Ordering & Compliance

C2M1000170D Ordering

Part Number
C2M1000170D
Order StatusLast Time Buy
Buy Online
PackageTO-247-3
Container TypeTube
Container Qty.30
Standard Packing Qty.450
Minimum Order Qty.450

C2M1000170D Compliance

Halogen FreeYes
RoHS Declaration
Download
REACH Declaration
Download
California Prop 65Learn More
ECCN
EAR99

Related Documents

C2M1000170D Related Documents

Soldering & Handling
PRD-05653: Recommended Solder Profiles for Power Products
Packing & Shipping
Power Product Packing & Shipping Reference Guide

Product Details

Features

  • 12-15V gate drive voltage
  • 0V turn-off voltage when used in flyback applications
  • High speed switching with low capacitances
  • Wide creepage and clearance distance between drain and source

Benefits

  • Higher system efficiency and power density
  • Supply multiple 12-48V devices with reduced cooling requirements
  • Higher switching frequency

Typical Applications

  • Auxiliary power supplies
  • Switch mode power supplies
  • Power inverters
  • 1500V based systems
  • High-voltage DC/DC converters
  • Motor Drives
  • Pulsed power applications

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS Models

Technical Support

Power Applications Forum

Featured Application Notes

PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

Documents, Tools & Support

Display All SKUs in Product Family (8)
  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
Data Sheets
C2M1000170D
10/2024
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters
New
01/2025
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors
11/2024
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

Knowledge Center

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Powerful Perspectives

Partnering for Maximum Impact: An Interview with Paul Wheeler

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PowerMakers

Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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