- Stable RDS(ON) over temperature
- Available in package options with separate Kelvin source pin
- Extremely fast switching
- Reduction of heat-sink requirements
Wolfspeed’s family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power applications such as UPS; motor control and drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more.
Based on 3rd generation technology; the wide variety of on-resistances and package options enables designers to select the right part for their applications.
Pairing Wolfspeed’s 1200 V Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency for demanding applications.
RDS(ON) at 25°C
Gate Charge Total
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Recommended For New Design?
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs