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C4D20120A

C4D20120A
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1200 V, 20 A, TO-220-2 package, Gen 4 Discrete SiC Schottky Diode
Wolfspeed's 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

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1200 V Discrete Silicon Carbide Schottky Diodes

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1200 V Discrete Silicon Carbide Schottky Diodes

Product SKU
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Data Sheet
CAD Model
Blocking Voltage
Current Rating
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Package
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Recommended For New Design?
C4D20120A
1200 V
20 A
1.5 V
20 A
TO-220-2
Industrial
Yes

Documents, Tools & Support

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Documents

Document Type
Document Name
Last Updated
Application Notes
09/2022
Application Notes
02/2022
Application Notes
05/2023
Data Sheets
03/2023
Product Catalog
02/2024
Sales Terms
12/2021
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024
Technical SupportPower Applications Forum

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Low Load Efficiency Simulations with Silicon Carbide

Power electronics devices are almost never working at maximum of their capabilities because of safety, reliability but even application mission profile. Our experts will demonstrate how Wolfspeed's free SpeedFit simulation tool is the perfect starting point before moving to accurate LTSpice simulations.
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