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1200 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-220-2 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-2 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
E4D10120A
1200 V; 10 A; TO-220-2 package; Gen 4 Discrete Silicon Carbide (SiC) Schottky Diode

Wolfspeed’s E-Series diodes are specifically designed to be robust and relibale in the harshest environments. As a result; the E-Series diodes are the industry’s first 1200V SiC diodes to be automotive qualified and high-humidity/high-voltage/high-temperature tested. The E-Series family of diodes are ideal for on-board and off-board automotive applications and solar power inversion.

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1200 V Discrete Silicon Carbide Schottky Diodes

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1200 V Discrete Silicon Carbide Schottky Diodes

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E4D10120A
1200 V
10 A
Gen 4
1.5 V
10 A
56 nC
166 W
TO-220-2
Automotive
Yes

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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