Features
- 650-Volt Schottky Rectifier
- Zero Reverse Recovery Current
- Zero Forward Recovery Voltage
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive temperature coefficient on VF
650 V Bare Die Silicon Carbide Schottky Diode – Gen 3
CPW3-0650-S004B
650 V; 4 A; Gen 3 Bare Die Silicon Carbide (SiC) Schottky Diode
Wolfspeed’s Gen 3 family of 650 V Silicon Carbide (SiC) Schottky diodes feature extremely fast switching; zero forward & reverse recovery; and high-frequency operation. Optimized for use in high power applications like Switch Mode Power Supplies (SMPS); Boost diodes in PFC or DC/DC stages; Free Wheeling Diodes in Inverter stages; AC/DC converters; and Solar energy systems.
Products
650 V Bare Die Silicon Carbide Schottky Diode – Gen 3
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650 V Bare Die Silicon Carbide Schottky Diode – Gen 3
Product SKU | Buy Online | Data Sheet | Qualification | Blocking Voltage | Current Rating | Total Capacitive Charge (QC (typ)) | Maximum Junction Temperature | Generation | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|
CPW3-0650-S004B | Industrial | 650 V | 4 A | 8.5 nC | 175 °C | Gen 3 | Yes |
Product Details
Benefits
- Reduces system size; weight; and cooling requirements
- Increased power density
- Parallel mode operation possible
Applications
- Switch Mode Power Supplies (SMPS)
- Boost diodes in PFC or DC/DC stages
- Free Wheeling Diodes in Inverter stages
- AC/DC converters
- Solar energy systems
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Data Sheets | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
|
| Sales Terms |
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