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  • Discrete Silicon Carbide MOSFETs
  • 650 V Discrete Silicon Carbide MOSFETs

650 V Discrete Silicon Carbide MOSFETs

The industry's lowest on-state resistances and switching losses for maximum efficiency and power density

Wolfspeed extends its silicon carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, battery management systems, and other applications.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Front and back views of Wolfspeed's 650 V TOLL MOSFET
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Front and back views of Wolfspeed's 650 V TOLL MOSFET
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Front and back views of Wolfspeed's 650 V TOLL MOSFET
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

No filters selected, showing all 18 products

Filter By

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
C3M0015065D
Active
650 V
15 mΩ
120 A
175 °C
TO-247-3
Industrial
C3M0015065K
Active
650 V
15 mΩ
120 A
175 °C
TO-247-4
Industrial
C4MV015065T
New
Active
650 V
15 mΩ
150 A
175 °C
TOLT (TSC)
Industrial
C3M0025065L
Active
650 V
25 mΩ
77 A
175 °C
TOLL
Industrial
C3M0025065J1
Active
650 V
25 mΩ
80 A
175 °C
TO-263-7 XL
Industrial
C3M0025065D
Active
650 V
25 mΩ
97 A
175 °C
TO-247-3
Industrial
C3M0025065K
Active
650 V
25 mΩ
97 A
175 °C
TO-247-4
Industrial
C3M0045065J1
Active
650 V
45 mΩ
47 A
175 °C
TO-263-7 XL
Industrial
C3M0045065D
Active
650 V
45 mΩ
49 A
175 °C
TO-247-3
Industrial
C3M0045065K
Active
650 V
45 mΩ
49 A
175 °C
TO-247-4
Industrial
C3M0045065L
Active
650 V
45 mΩ
49 A
175 °C
TOLL
Industrial
C3M0060065D
Active
650 V
60 mΩ
29 A
175 °C
TO-247-3
Industrial
C3M0060065J
Active
650 V
60 mΩ
36 A
175 °C
TO-263-7
Industrial
C3M0060065K
Active
650 V
60 mΩ
37 A
175 °C
TO-247-4
Industrial
C3M0060065L
Active
650 V
60 mΩ
39 A
175 °C
TOLL
Industrial
C4MV025065T
Coming
Soon
Coming Soon
650 V
25 mΩ
175 °C
TOLT (TSC)
Industrial
C4MV045065T
Coming
Soon
Coming Soon
650 V
45 mΩ
175 °C
TOLT (TSC)
Industrial
C4MV060065T
Coming
Soon
Coming Soon
650 V
60 mΩ
175 °C
TOLT (TSC)
Industrial

Product Details

Features

  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (TJ = 175°C)
  • Kelvin Source Pin
  • Industry Standard Through-Hole & SMT Packages
  • Small form factor
  • Low lead inductance
  • Low Thermal Impedance

Benefits

  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
  • Enables new hard switching topologies (Totem-Pole PFC)

Typical Applications

  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS Models SpeedVal Kit™ Modular Evaluation Platform

Technical Support

Power Applications Forum

Featured Application Notes

PRD-08367: EV Charging Power Topologies Design Guidebook
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

27 Documents Available
Document Type
Document Name
Last Updated
User Guide
PRD-02490: CRD-06600FF065N-K 6.6 kW Bi-Directional Totem-Pole PFC AC-DC and CLLC DC-DC User Guide (PDF)
07/2023
Application Notes
PRD-08999: Turn-Off Gate Voltage Considerations for SiC MOSFETs (PDF)
12/2025
Application Notes
PRD-09597: Introduction to Pulsed Current Safe Operating Area (PDF)
New
10/2025
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages (PDF)
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies (PDF)
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters (PDF)
01/2025
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs (PDF)
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems (PDF)
07/2024
Application Notes
PRD-08367: EV Charging Power Topologies Design Guidebook (PDF)
01/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software (PDF)
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations (PDF)
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events (PDF)
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products (PDF)
09/2022
Application Notes
PRD-05641: Designing with Silicon Carbide in Energy Storage Applications (PDF)
02/2022
Application Notes
PRD-02441: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies (PDF)
11/2021
Test Report
PRD-00409: Driving Wolfspeed C3M SiC MOSFETs with Analog Devices ADuM4121 (PDF)
01/2024
Test Report
PRD-02344: SiC MOSFET Short-Circuit Protection Using Skyworks™ Si828x Gate Driver (PDF)
03/2022
White Papers
Designed to Last, Even in the Harshest Environments (PDF)
New
11/2025
White Papers
Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
11/2025
White Papers
SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
New
11/2025
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications (PDF)
01/2025
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors (Link)
11/2024
Product Catalog
Power Product Line Card (PDF)
01/2025
Sales Sheets & Flyers
Wolfspeed® 650 V Silicon Carbide MOSFET In Compact TOLL (TO-LEADLESS) Package (PDF)
10/2022
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions (PDF)
04/2025
Packing & Shipping
Power Product Packing & Shipping Reference Guide (PDF)
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
11/2025

Knowledge Center

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