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650 V Discrete Silicon Carbide MOSFETs

650 V Discrete Silicon Carbide MOSFETs

Composite image of the four 650V packages used for Wolfspeed's Discrete Silicon Carbide MOSFETs
The industry's lowest on-state resistances and switching losses for maximum efficiency and power density
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Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.

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Recommended For New Design?
Qualification
C3M0120065J
650 V
120 mΩ
Gen 3
21 A
26 nC
45 pF
86 W
175 °C
TO-263-7
Yes
Industrial
C3M0120065D
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-3
Yes
Industrial
C3M0120065K
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-4
Yes
Industrial
PC3M0120065L
650 V
120 mΩ
Gen 3
23 A
25 nC
43 pF
89 W
150 °C
TOLL
Yes
Industrial
C3M0060065D
650 V
60 mΩ
Gen 3
29 A
46 nC
80 pF
150 W
175 °C
TO-247-3
Yes
Industrial
C3M0060065J
650 V
60 mΩ
Gen 3
36 A
46 nC
80 pF
136 W
175 °C
TO-263-7
Yes
Industrial
C3M0060065K
650 V
60 mΩ
Gen 3
37 A
46 nC
80 pF
150 W
175 °C
TO-247-4
Yes
Industrial
PC3M0060065L
650 V
60 mΩ
Gen 3
38 A
46 nC
80 pF
126 W
150 °C
TOLL
Yes
Industrial
C3M0045065J1
New
650 V
45 mΩ
Gen 3
47 A
61 nC
101 pF
147 W
150 °C
TO-263-7
Yes
Industrial
C3M0045065D
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-3
Yes
Industrial
C3M0045065K
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-4
Yes
Industrial
PC3M0045065L
650 V
45 mΩ
Gen 3
51 A
59 nC
101 pF
160 W
150 °C
TOLL
Yes
Industrial
C3M0025065J1
650 V
25 mΩ
Gen 3
80 A
109 nC
178 pF
271 W
150 °C
TO-263-7
Yes
Industrial
C3M0025065D
650 V
25 mΩ
Gen 3
97 A
178 pF
175 °C
TO-247-3
Yes
Industrial
C3M0025065K
650 V
25 mΩ
Gen 3
97 A
112 nC
178 pF
326 W
175 °C
TO-247-4
Yes
Industrial
C3M0015065D
650 V
15 mΩ
Gen 3
120 A
188 nC
289 pF
416 W
175 °C
TO-247-3
Yes
Industrial
C3M0015065K
650 V
15 mΩ
Gen 3
120 A
188 nC
289 pF
416 W
175 °C
TO-247-4
Yes
Industrial
Features
  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (TJ = 175°C)
  • Kelvin Source Pin
  • Industry Standard Through-Hole & SMT Packages
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)
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