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650V Discrete Silicon Carbide MOSFETs

650V Discrete Silicon Carbide MOSFETs

Product shots of Wolfspeed's Discrete SiC MOSFETs in their different packages - TO-247-3, TO-247-4, and TO-263-7.
The industry's lowest on-state resistances and switching losses for maximum efficiency and power density
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Wolfspeed extends its SiC technology leadership with the introduction of 3rd-Generation 650V MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650V MOSFET product family is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.

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Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0120065J
650 V
120 mΩ
Gen 3
21 A
26 nC
45 pF
86 W
175 °C
TO-263-7
Yes
Industrial
C3M0120065D
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-3
Yes
Industrial
C3M0120065K
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-4
Yes
Industrial
C3M0060065D
650 V
60 mΩ
Gen 3
29 A
46 nC
80 pF
150 W
175 °C
TO-247-3
Yes
Industrial
C3M0060065J
650 V
60 mΩ
Gen 3
36 A
46 nC
80 pF
136 W
175 °C
TO-263-7
Yes
Industrial
C3M0060065K
650 V
60 mΩ
Gen 3
37 A
46 nC
80 pF
150 W
175 °C
TO-247-4
Yes
Industrial
C3M0045065J1
New
650 V
45 mΩ
Gen 3 MOS
47 A
61 nC
101 pF
147 W
150 °C
TO-263-7
Yes
Industrial
C3M0045065D
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-3
Yes
Industrial
C3M0045065K
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-4
Yes
Industrial
C3M0025065J1
New
650 V
25 mΩ
Gen 3 MOS
80 A
109 nC
178 pF
271 W
150 °C
TO-263-7
Yes
Industrial
C3M0015065D
650 V
15 mΩ
Gen 3
81 A
188 nC
289 pF
416 W
175 °C
TO-247-3
Yes
Industrial
C3M0015065K
650 V
15 mΩ
Gen 3
91 A
188 nC
289 pF
416 W
175 °C
TO-247-4
Yes
Industrial
C3M0025065D
650 V
25 mΩ
Gen 3
97 A
108 nC
178 pF
325 W
175 °C
TO-247-3
Yes
Industrial
C3M0025065K
650 V
25 mΩ
Gen 3
97 A
112 nC
178 pF
326 W
175 °C
TO-247-4
Yes
Industrial
Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0120065J
650 V
120 mΩ
Gen 3
21 A
26 nC
45 pF
86 W
175 °C
TO-263-7
Yes
Industrial
C3M0120065D
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-3
Yes
Industrial
C3M0120065K
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-4
Yes
Industrial
C3M0060065D
650 V
60 mΩ
Gen 3
29 A
46 nC
80 pF
150 W
175 °C
TO-247-3
Yes
Industrial
C3M0060065J
650 V
60 mΩ
Gen 3
36 A
46 nC
80 pF
136 W
175 °C
TO-263-7
Yes
Industrial
C3M0060065K
650 V
60 mΩ
Gen 3
37 A
46 nC
80 pF
150 W
175 °C
TO-247-4
Yes
Industrial
C3M0045065J1
New
650 V
45 mΩ
Gen 3 MOS
47 A
61 nC
101 pF
147 W
150 °C
TO-263-7
Yes
Industrial
C3M0045065D
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-3
Yes
Industrial
C3M0045065K
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-4
Yes
Industrial
C3M0025065J1
New
650 V
25 mΩ
Gen 3 MOS
80 A
109 nC
178 pF
271 W
150 °C
TO-263-7
Yes
Industrial
C3M0015065D
650 V
15 mΩ
Gen 3
81 A
188 nC
289 pF
416 W
175 °C
TO-247-3
Yes
Industrial
C3M0015065K
650 V
15 mΩ
Gen 3
91 A
188 nC
289 pF
416 W
175 °C
TO-247-4
Yes
Industrial
C3M0025065D
650 V
25 mΩ
Gen 3
97 A
108 nC
178 pF
325 W
175 °C
TO-247-3
Yes
Industrial
C3M0025065K
650 V
25 mΩ
Gen 3
97 A
112 nC
178 pF
326 W
175 °C
TO-247-4
Yes
Industrial
Features
  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (TJ = 175°C)
  • Kelvin Source Pin
  • Industry Standard Through-Hole & SMT Packages
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)
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MOSFETs

Using Parasitic Modeling Software to Understand and Optimize Silicon Carbide Power PCB Layouts

Achieve high-performing designs using Wolfspeed Silicon Carbide (SiC) MOSFETs. This article will discuss how to use parasitic modeling software, in partnership with Keysight Technologies tools, to optimize Silicon Carbide Power PCB Layouts.
Continue Reading 
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