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  • Discrete Silicon Carbide MOSFETs
  • 650 V Discrete Silicon Carbide MOSFETs

650 V Discrete Silicon Carbide MOSFETs

The industry's lowest on-state resistances and switching losses for maximum efficiency and power density
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Front and back views of Wolfspeed's 650 V TOLL MOSFET
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Front and back views of Wolfspeed's 650 V TOLL MOSFET
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Front and back views of Wolfspeed's 650 V TOLL MOSFET
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

650 V Discrete Silicon Carbide MOSFETs

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650 V Discrete Silicon Carbide MOSFETs - Filter By

650 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
C3M0015065D
Active
650 V
15 mΩ
120 A
175 °C
TO-247-3
Industrial
C3M0015065K
Active
650 V
15 mΩ
120 A
175 °C
TO-247-4
Industrial
C3M0025065L
Active
650 V
25 mΩ
77 A
175 °C
TOLL
Industrial
C3M0025065J1
Active
650 V
25 mΩ
80 A
175 °C
TO-263-7 XL
Industrial
C3M0025065D
Active
650 V
25 mΩ
97 A
175 °C
TO-247-3
Industrial
C3M0025065K
Active
650 V
25 mΩ
97 A
175 °C
TO-247-4
Industrial
C3M0045065J1
Active
650 V
45 mΩ
47 A
175 °C
TO-263-7 XL
Industrial
C3M0045065D
Active
650 V
45 mΩ
49 A
175 °C
TO-247-3
Industrial
C3M0045065K
Active
650 V
45 mΩ
49 A
175 °C
TO-247-4
Industrial
C3M0045065L
Active
650 V
45 mΩ
49 A
175 °C
TOLL
Industrial
C3M0060065D
Active
650 V
60 mΩ
29 A
175 °C
TO-247-3
Industrial
C3M0060065J
Active
650 V
60 mΩ
36 A
175 °C
TO-263-7
Industrial
C3M0060065K
Active
650 V
60 mΩ
37 A
175 °C
TO-247-4
Industrial
C3M0060065L
Active
650 V
60 mΩ
39 A
175 °C
TOLL
Industrial
C3M0120065J
Last Time Buy
650 V
120 mΩ
21 A
175 °C
TO-263-7
Industrial
C3M0120065L
Last Time Buy
650 V
120 mΩ
21 A
175 °C
TOLL
Industrial
C3M0120065D
Last Time Buy
650 V
120 mΩ
22 A
175 °C
TO-247-3
Industrial
C3M0120065K
Last Time Buy
650 V
120 mΩ
22 A
175 °C
TO-247-4
Industrial

End of Section

Product Details

Features

  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (TJ = 175°C)
  • Kelvin Source Pin
  • Industry Standard Through-Hole & SMT Packages
  • Small form factor
  • Low lead inductance
  • Low Thermal Impedance

Benefits

  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
  • Enables new hard switching topologies (Totem-Pole PFC)

Typical Applications

  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS Models SpeedVal Kit™ Modular Evaluation Platform

Technical Support

Power Applications Forum

Featured Application Notes

PRD-08367: EV Charging Power Topologies Design Guidebook
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
User Guide
PRD-02490: CRD-06600FF065N-K 6.6 kW Bi-Directional Totem-Pole PFC AC-DC and CLLC DC-DC User Guide
07/2023
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters
New
01/2025
Application Notes
PRD-08999: Turn-Off Gate Voltage Considerations for SiC MOSFETs
New
12/2024
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-08367: EV Charging Power Topologies Design Guidebook
01/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
Application Notes
PRD-05641: Designing with Silicon Carbide in Energy Storage Applications
02/2022
Application Notes
PRD-02441: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
11/2021
Test Report
PRD-00409: Driving Wolfspeed C3M SiC MOSFETs with Analog Devices ADuM4121
01/2024
Test Report
PRD-02344: SiC MOSFET Short-Circuit Protection Using Skyworks™ Si828x Gate Driver
03/2022
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
01/2025
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors
11/2024
Product Catalog
Power Product Line Card
01/2025
Sales Sheets & Flyers
Wolfspeed® 650 V Silicon Carbide MOSFET In Compact TOLL (TO-LEADLESS) Package
10/2022
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

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