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  • 900 V Bare Die SiC MOSFETs – Gen 3

900 V Bare Die SiC MOSFETs – Gen 3

Wolfspeed's Gen 3 family of 900 V silicon carbide MOSFETs for high performance power electronics
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology by introducing the most advanced SiC MOSFET technology and the industry’s first 900 V MOSFET platform. Optimized for high frequency power electronics applications including renewable energy inverters, electric vehicle (EV) charging systems, three-phase industrial power supplies and more. The 900 V platform enables smaller, lighter, and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
  • Overview
  • Parametric Data
  • Product Details
  • Tools & Support
  • Overview
  • Parametric Data
  • Product Details
  • Tools & Support

Parametric Data

900 V Bare Die SiC MOSFETs – Gen 3

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900 V Bare Die SiC MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
CPM3-0900-0010A
Active
900 V
10 mΩ
194 A
210 nC
360 pF
1300 nC
36 ns
175 °C
Gen 3
Industrial
CPM3-0900-0030A
Last Time Buy
900 V
30 mΩ
66 A
87 nC
137 pF
545 nC
62 ns
175 °C
Gen 3
Industrial
CPM3-0900-0065A
Last Time Buy
900 V
65 mΩ
32 A
33 nC
70 pF
220 nC
22 ns
175 °C
Gen 3
Industrial

End of Section

Product Details

Features

  • Minimum of 900V Vbr across entire operating temperature range
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance

Benefits

  • High-voltage; high-temperature; and high-humidity resistance enables true outdoor application for solar power conversion and off-board charging
  • Improves system efficiency with significantly lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Enables increased power density
  • Easy to parallel and compatible with standard gate drive designs

Typical Applications

  • Solar inverters
  • Motor Drives
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • Solid State Circuit Breakers
  • Off Board Chargers

Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
New
01/2025
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

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Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Partnering for Maximum Impact: An Interview with Paul Wheeler

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Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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