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A conductive heating coil representing how Wolfspeed's Silicon Carbide power products enable a smaller and lower-cost design.
Industrial

Commercial Induction Heating

Our Silicon Carbide devices magnify performance and minimize overall system cost over the aging Si IGBT to make Wolfspeed the leader in commercial induction heating.

Overview

Wolfspeed Silicon Carbide Solutions for Commercial Induction Heating

Using induction heating technology, industrial manufacturers can liquefy metal, grow semiconductor crystals, and ionize plasma faster and more safely than ever before. Processes that used to take hours, days, or even weeks have been greatly accelerated — meaning the overall production process can move much more quickly. However, commercial induction heating applications can use massive amounts of energy, and that’s where Wolfspeed Silicon Carbide (SiC) comes in to save the day.

Wolfspeed CRD300DA12E-XM3 - 300kW Three-Phase Inverter
Wolfspeed's 300kW XM3 Three-Phase Inverter Reference Design

Commercial induction heating, powered by Wolfspeed Silicon Carbide

To power commercial inductive heating systems, engineers must rely on extremely high currents in potentially high temperature environments. When using traditional silicon, the demands of these systems can result in reduced reliability and efficiency. But when it comes to “extremes,” Wolfspeed Silicon Carbide is a star. That’s because the unique physical properties of wide-bandgap Silicon Carbide offer higher efficiency, faster switching speeds, and lower thermal losses than traditional silicon.

Lower costs, lower weight, higher performance

Wolfspeed Silicon Carbide allows engineers to build commercial induction heating power supplies that can switch faster, using fewer and smaller components. Silicon Carbide’s superior thermal performance also enables designers to use smaller heat sinks. That means their overall commercial induction heating system can take up less space and a lower total cost without sacrificing performance.

The Numbers are on Your Side.

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.
Up To
30%
Lower Losses
Up To
50%
Higher Power Density
Up To
30%
Smaller Size

Wolfspeed Silicon Carbide Components for Commercial Induction Heating

Wolfspeed products represent the culmination of years of experience and expertise, where quality meets innovation to help bring your design forward. Wolfspeed’s 1200V Silicon Carbide MOSFETs offer the industry’s lowest drain-to-source on-resistances, enabling up to 50% higher power density, which means you can get the same amount of power out of a smaller and lighter supply—or more power without changing your existing supply’s form factor.

Featured 650V Discrete Silicon Carbide MOSFETs

View All Discrete SiC MOSFETs
Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
CAD Model
C3M0120065J
650 V
120 mΩ
Gen 3
21 A
26 nC
45 pF
86 W
175 °C
TO-263-7
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-3
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-4
650 V
120 mΩ
Gen 3
23 A
25 nC
43 pF
89 W
150 °C
TOLL
650 V
60 mΩ
Gen 3
29 A
46 nC
80 pF
150 W
175 °C
TO-247-3
650 V
60 mΩ
Gen 3
36 A
46 nC
80 pF
136 W
175 °C
TO-263-7
650 V
60 mΩ
Gen 3
37 A
46 nC
80 pF
150 W
175 °C
TO-247-4
650 V
60 mΩ
Gen 3
38 A
46 nC
80 pF
126 W
150 °C
TOLL
C3M0045065J1
New
650 V
45 mΩ
Gen 3
47 A
61 nC
101 pF
147 W
150 °C
TO-263-7
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-3
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-4
650 V
45 mΩ
Gen 3
51 A
59 nC
101 pF
160 W
150 °C
TOLL
650 V
25 mΩ
Gen 3
80 A
109 nC
178 pF
271 W
150 °C
TO-263-7
650 V
25 mΩ
Gen 3
97 A
178 pF
175 °C
TO-247-3
650 V
25 mΩ
Gen 3
97 A
112 nC
178 pF
326 W
175 °C
TO-247-4
650 V
15 mΩ
Gen 3
120 A
188 nC
289 pF
416 W
175 °C
TO-247-3
650 V
15 mΩ
Gen 3
120 A
188 nC
289 pF
416 W
175 °C
TO-247-4

Featured 650V Discrete Silicon Carbide Schottky Diodes

Product SKU
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Request Sample
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
CAD Model
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
73 W
TO-220-2
Industrial
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
52 W
TO-252-2
Industrial
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
73 W
TO-220-2
Industrial
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
68 W
TO-252-2
Industrial
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92.6 W
TO-220-2
Industrial
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
85 W
TO-252-2
Industrial
650 V
10 A
Gen 6
1.27 V
10 A
35 nC
109 W
TO-220-2
Industrial
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
99 W
TO-252-2
Industrial
650 V
16 A
Gen 6
1.27 V
16 A
29 nC
100 W
TO-247-3
Industrial
650 V
20 A
Gen 6
1.27 V
20 A
35 nC
116 W
TO-247-3
Industrial

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
GM3
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
194 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half-Bridge
1200 V
146 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM3
Half-Bridge
1200 V
105 A
11 mΩ
Gen 3 MOS
150 °C
FM3
Half-Bridge
1200 V
78 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Six-pack (three-phase)
1200 V
51 A
21 mΩ
Gen 3 MOS
150 °C
FM3
Six-pack (three-phase)
1200 V
40 A
32 mΩ
Gen 3 MOS
150 °C

XM3 Half-Bridge Silicon Carbide Power Module Family

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
XM3
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm

Featured 62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
62mm
Half-Bridge
1200 V
300 A
4.2 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
62mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
175 °C
106 x 62 x 30 mm

Reference Designs to Accelerate Your Time to Market

Wolfspeed not only offers the solutions to bring your design into the future of automotive technology, but our Reference Designs can help you accelerate your design cycle process. Reference Designs include full system design resource package with schematics, BOM, and more.

Featured Reference Designs for Commercial Induction Heating

Name
Buy Online
Topology
Package
Designed By
Product SKU
View Product
DC to AC
XM3
Wolfspeed
CRD300DA12E-XM3
DC to AC
XM3
Wolfspeed
CRD250DA12E-XM3
DC to AC
XM3
Wolfspeed
CRD200DA12E-XM3
DC to AC
XM3
Wolfspeed
CRD600DA12E-XM3

Wolfspeed: Disruptive by Design

From its inception, Wolfspeed has been focused on the future, and that silicon carbide power is the technology that can bring your business forward.

Wolfspeed has more 30 years of experience in silicon carbide power and 7+ trillion installed field hours. We have invested in the future of silicon carbide technology and are expanding our capacity thirtyfold to support your business’s growth. With more than 20 years of diode and MOSFET production, we are equipped to supply the components that enable the future of Commercial Induction Heating.

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Considering an offline PFC to today's 80+ highest efficiency standards or a 3 phase bidirectional grid tied active front end; maybe looking at a dc-dc switching at 1Mhz or debating going discrete or module. This whitepaper will walk through relevant SiC based system architectures to achieve such designs – all achieving higher efficiency, higher power density and lower system cost. 500W to 100kW we will consider it all with topology examples, results and design considerations.
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