Our Silicon Carbide devices magnify performance and minimize overall system cost over the aging Si IGBT to make Wolfspeed the leader in commercial induction heating.
Using induction heating technology, industrial manufacturers can liquefy metal, grow semiconductor crystals, and ionize plasma faster and more safely than ever before. Processes that used to take hours, days, or even weeks have been greatly accelerated — meaning the overall production process can move much more quickly. However, commercial induction heating applications can use massive amounts of energy, and that’s where Wolfspeed Silicon Carbide (SiC) comes in to save the day.
To power commercial inductive heating systems, engineers must rely on extremely high currents in potentially high temperature environments. When using traditional silicon, the demands of these systems can result in reduced reliability and efficiency. But when it comes to “extremes,” Wolfspeed Silicon Carbide is a star. That’s because the unique physical properties of wide-bandgap Silicon Carbide offer higher efficiency, faster switching speeds, and lower thermal losses than traditional silicon.
Wolfspeed Silicon Carbide allows engineers to build commercial induction heating power supplies that can switch faster, using fewer and smaller components. Silicon Carbide’s superior thermal performance also enables designers to use smaller heat sinks. That means their overall commercial induction heating system can take up less space and a lower total cost without sacrificing performance.
Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.
Wolfspeed products represent the culmination of years of experience and expertise, where quality meets innovation to help bring your design forward. Wolfspeed’s 1200V Silicon Carbide MOSFETs offer the industry’s lowest drain-to-source on-resistances, enabling up to 50% higher power density, which means you can get the same amount of power out of a smaller and lighter supply—or more power without changing your existing supply’s form factor.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 120 mΩ | Gen 3 | 21 A | 26 nC | 45 pF | 86 W | 175 °C | TO-263-7 | |||||
C3M0120065L New | 650 V | 120 mΩ | Gen 3 | 21 A | 26 nC | 45 pF | 86 W | 175 °C | TOLL | ||||
650 V | 120 mΩ | Gen 3 | 22 A | 28 nC | 45 pF | 98 W | 175 °C | TO-247-3 | |||||
650 V | 120 mΩ | Gen 3 | 22 A | 28 nC | 45 pF | 98 W | 175 °C | TO-247-4 | |||||
650 V | 60 mΩ | Gen 3 | 29 A | 46 nC | 80 pF | 150 W | 175 °C | TO-247-3 | |||||
650 V | 60 mΩ | Gen 3 | 36 A | 46 nC | 80 pF | 136 W | 175 °C | TO-263-7 | |||||
650 V | 60 mΩ | Gen 3 | 37 A | 46 nC | 80 pF | 150 W | 175 °C | TO-247-4 | |||||
C3M0060065L New | 650 V | 60 mΩ | Gen 3 | 39 A | 46 nC | 72 pF | 131 W | 175 °C | TOLL | ||||
650 V | 45 mΩ | Gen 3 | 47 A | 61 nC | 101 pF | 147 W | 150 °C | TO-263-7 | |||||
650 V | 45 mΩ | Gen 3 | 49 A | 63 nC | 101 pF | 176 W | 175 °C | TO-247-3 | |||||
650 V | 45 mΩ | Gen 3 | 49 A | 63 nC | 101 pF | 176 W | 175 °C | TO-247-4 | |||||
C3M0045065L New | 650 V | 45 mΩ | Gen 3 | 49 A | 59 nC | 101 pF | 164 W | 175 °C | TOLL | ||||
650 V | 25 mΩ | Gen 3 | 80 A | 109 nC | 178 pF | 271 W | 150 °C | TO-263-7 | |||||
650 V | 25 mΩ | Gen 3 | 97 A | 108 nC | 178 pF | 325 W | 175 °C | TO-247-3 | |||||
650 V | 25 mΩ | Gen 3 | 97 A | 112 nC | 178 pF | 326 W | 175 °C | TO-247-4 | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-3 | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-4 |
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 4 A | Gen 6 | 1.27 V | 4 A | 16 nC | 73 W | TO-220-2 | Industrial | |||||
650 V | 4 A | Gen 6 | 1.27 V | 4 A | 16 nC | 52 W | TO-252-2 | Industrial | |||||
650 V | 6 A | Gen 6 | 1.27 V | 6 A | 23 nC | 73 W | TO-220-2 | Industrial | |||||
650 V | 6 A | Gen 6 | 1.27 V | 6 A | 23 nC | 68 W | TO-252-2 | Industrial | |||||
650 V | 8 A | Gen 6 | 1.27 V | 8 A | 29 nC | 92.6 W | TO-220-2 | Industrial | |||||
650 V | 8 A | Gen 6 | 1.27 V | 8 A | 29 nC | 85 W | TO-252-2 | Industrial | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 35 nC | 109 W | TO-220-2 | Industrial | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 34 nC | 99 W | TO-252-2 | Industrial | |||||
650 V | 16 A | Gen 6 | 1.27 V | 16 A | 29 nC | 100 W | TO-247-3 | Industrial | |||||
650 V | 20 A | Gen 6 | 1.27 V | 20 A | 35 nC | 116 W | TO-247-3 | Industrial |
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GM3 | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
CAB006M12GM3T Coming Soon | GM3 | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | |||||
CAB006A12GM3T Coming Soon | GM3 | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | |||||
GM3 | Half Bridge (AlN substrate) | 1200 V | 194 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half-Bridge | 1200 V | 146 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
CAB008M12GM3T Coming Soon | GM3 | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | |||||
CAB008A12GM3T Coming Soon | GM3 | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | |||||
FM3 | Half-Bridge | 1200 V | 105 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
CAB011M12FM3T Coming Soon | FM3 | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | |||||
FM3 | Half-Bridge | 1200 V | 78 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
CAB016M12FM3T Coming Soon | FM3 | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | |||||
FM3 | Six-pack (three-phase) | 1200 V | 51 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
CBB021M12FM3 New | FM3 | Full-Bridge | 1200 V | 50 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | |||||
CCB021M12FM3T Coming Soon | FM3 | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 | 150 °C | 62.8 mm x 33.8 mm | |||||
CBB021M12FM3T Coming Soon | FM3 | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | |||||
FM3 | Six-pack (three-phase) | 1200 V | 40 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
CBB032M12FM3 New | FM3 | Full-Bridge | 1200 V | 39 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | |||||
CCB032M12FM3T Coming Soon | FM3 | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | |||||
CBB032M12FM3T Coming Soon | FM3 | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm |
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
CAB320M17XM3 New | XM3 | Half-Bridge | 1700 V | 320 A | 4 mΩ | Gen 3 | 175 °C | 80 x 53 x 19 mm | ||||
XM3 | Half-Bridge | 1200 V | 400 A | 4 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | |||||
XM3 | Half-Bridge | 1200 V | 425 A | 3.2 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | |||||
XM3 | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | |||||
XM3 | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm |
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
62mm | Half-Bridge | 1200 V | 300 A | 4.2 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | |||||
62mm | Half-Bridge | 1200 V | 300 A | 4 mΩ | Gen 3 MOS | 175 °C | 105 x 62 x 31 mm | |||||
62mm | Half-Bridge | 1200 V | 400 A | 3.25 mΩ | Gen 3 MOS | 175 °C | 105 x 62 x 31 mm | |||||
62mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS | 150 °C | 105 x 62 x 31 mm |
Wolfspeed not only offers the solutions to bring your design into the future of automotive technology, but our Reference Designs can help you accelerate your design cycle process. Reference Designs include full system design resource package with schematics, BOM, and more.
Name | Buy Online | Topology | Package | Designed By | Product SKU | View Product |
|---|---|---|---|---|---|---|
DC to AC | XM3 | Wolfspeed | CRD300DA12E-XM3 | |||
DC to AC | XM3 | Wolfspeed | CRD250DA12E-XM3 | |||
DC to AC | XM3 | Wolfspeed | CRD200DA12E-XM3 | |||
DC to AC | XM3 | Wolfspeed | CRD600DA12E-XM3 |
From its inception, Wolfspeed has been focused on the future, and that silicon carbide power is the technology that can bring your business forward.
Wolfspeed has more 30 years of experience in silicon carbide power and 7+ trillion installed field hours. We have invested in the future of silicon carbide technology and are expanding our capacity thirtyfold to support your business’s growth. With more than 20 years of diode and MOSFET production, we are equipped to supply the components that enable the future of Commercial Induction Heating.
