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C2D05120E

Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
1200 V, 5 A, TO-252-2 package, Gen 2 Discrete SiC Schottky Diode
NOTE: Not recommended for new designs. C4D05120E is the recommended replacement.
Wolfspeed's 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

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C2D05120E

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C2D05120E

Product SKU
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Recommended For New Design?
C2D05120E
1200 V
5 A
Gen 2
1.6 V
8.5 A
28 nC per leg
136 W
TO-252-2
Industrial
No

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Application Notes
Data Sheets
Product Catalog
Sales Terms
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs

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