Skip to Main Content
Contact
  • English
  • 简体中文
  • 繁體中文
View Cart

C2D10120D

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1200 V, 10 A, TO-247-3 package, Gen 2 Discrete SiC Schottky Diode
NOTE: Not recommended for new designs. C4D10120D is the recommended replacement.
Wolfspeed's 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

Products

C2D10120D

No filters selected, showing all 1 products

C2D10120D

Product SKU
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Recommended For New Design?
C2D10120D
1200 V
10 A
Gen 2
1.6 V per leg
18 A
28 nC per leg
138 W per leg
TO-247-3
Industrial
No

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Application Notes
Data Sheets
Product Catalog
Sales Terms
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Technical SupportPower Applications Forum

Knowledge Center

View All
Power
|
Power Modules

Announcing the Newest Additions to the Wolfspeed WolfPACK™ Power Module Family

Read about the all new Wolfspeed WolfPACK™ power modules. These modules give designers scalability and efficiency along with maintaining the simplicity of the design.
Continue Reading  Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Instagram
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.