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C2D10120D

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1200 V, 10 A, TO-247-3 package, Gen 2 Discrete SiC Schottky Diode
NOTE: Not recommended for new designs. C4D10120D is the recommended replacement.
Wolfspeed's 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

Products

C2D10120D

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C2D10120D

Product SKU
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Status
C2D10120D
1200 V
10 A
Gen 2
1.6 V per leg
18 A
28 nC per leg
138 W per leg
TO-247-3
Industrial
NRND

Documents, Tools, & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
09/2022
Application Notes
02/2022
Data Sheets
01/2024
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021
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