Skip to Main Content
Contact
  • English
  • 简体中文
  • 繁體中文
View Cart

C2D20120D

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1200 V, 20 A, TO-247-3 package, Gen 2 Discrete SiC Schottky Diode
NOTE: Not recommended for new designs. C4D20120D is the recommended replacement.
Wolfspeed's 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

Products

C2D20120D

No filters selected, showing all 1 products

C2D20120D

Product SKU
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Recommended For New Design?
C2D20120D
1200 V
20 A
Gen 2
1.6 V per leg
29 A
61 nC per leg
312 W per leg
TO-247-3
Industrial
No

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
09/2022
Application Notes
02/2022
Data Sheets
01/2024
Product Catalog
02/2024
Sales Terms
12/2021
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024

Knowledge Center

View All
Power
|
Air Conditioning

Design Next-Generation Data Center Cooling Systems with Silicon Carbide

Data center cooling systems account for 20-45% of power consumed by data centers. The efficiency of these cooling systems can be improved with silicon carbide leading to up to 50% reduction in system losses.
Continue Reading  Technical Articles

Footer

Social Media

  • Facebook
  • Instagram
  • X
  • LinkedIn
  • YouTube
Copyright © 2024 Wolfspeed, Inc.