Features
- 600-volt Schottky rectifier
- Optimized for PFC boost diode application
- Zero-reverse-recovery current
- High-frequency operation
- Temperature-independent switching behavior
- Extremely fast switching
- Positive temperature coefficient on VF
C3D1P7060Q
600 V; 1.7 A; QFN package; Gen 3 Discrete Silicon Carbide (SiC) Schottky Diode
NOTE: Not recommended for new designs.
Products
C3D1P7060Q
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C3D1P7060Q
Product SKU | Data Sheet | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|---|---|
C3D1P7060Q | 600 V | 1.7 A | Gen 3 | 1.5 V | 3 A | 4 nC | 35.5 W | QFN | Industrial | No |
Benefits
- Compact surface-mount package
- Essentially no switching losses
- Higher efficiency
- Reduction of heat-sink requirements
- Parallel devices without thermal runaway
Documents, Tools & Support
- Technical & Sales Documents
Documents
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Document Type | Document Name |
|---|---|
| Data Sheets | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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| Sales Terms |
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