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C3D1P7060Q

600 V; 1.7 A; QFN package; Gen 3 Discrete Silicon Carbide (SiC) Schottky Diode
NOTE: Not recommended for new designs.

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C3D1P7060Q

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C3D1P7060Q

Product SKU
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Recommended For New Design?
C3D1P7060Q
600 V
1.7 A
Gen 3
1.5 V
3 A
4 nC
35.5 W
QFN
Industrial
No
Features
  • 600-volt Schottky rectifier
  • Optimized for PFC boost diode application
  • Zero-reverse-recovery current
  • High-frequency operation
  • Temperature-independent switching behavior
  • Extremely fast switching
  • Positive temperature coefficient on VF
Benefits
  • Compact surface-mount package
  • Essentially no switching losses
  • Higher efficiency
  • Reduction of heat-sink requirements
  • Parallel devices without thermal runaway

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
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