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Blocking Voltage 1200 V
Current Rating at 25°C 100 A
RDS(ON) at 25°C 21 mΩ
Package TO-247-3
Gate charge total 160 nC
Maximum junction temperature 175 ˚C
Reverse-Recovery Charge (Qrr) 879 nC
Output Capacitance 180 pF
Reverse-Recover Time (Trr) 81 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0021120D


Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs.  Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode.  The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature.  Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance.  Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today.

Features

  • Proven and reliable 3rd generation planar MOSFET with rugged intrinsic Body Diode (no need for external diode)
  • Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C]
  • Easy to implement – MOSFET fully on at +15V gate drive
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Target Applications

  • Solar energy systems
  • EV-Charging
  • Uninterruptible power supply (UPS)
  • SMPS
  • Motor Control and Drives
  • Energy storage

Download our LTspice or PLECS models or try our SpeedFit design simulator

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