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Blocking Voltage 1200 V
Current Rating at 25°C 30 A
RDS(ON) at 25°C 75 mΩ
Package TO-263-7
Gate charge total 51 nC
Maximum junction temperature 150 °C
Reverse-Recovery Charge (Qrr) 220 nC
Output Capacitance 58 pF
Reverse-Recover Time (Trr) 18 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0075120J

Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing.  The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.


  • Minimum of 1200V Vbr across entire operating temperature range
  • New low-impedance package with driver source
  • > 7mm of creepage/clearance between drain and source
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Download our LTspice Models or try our SpeedFit design simluator



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