KIT-CRD-3DD12P

This evaluation board demonstrates the switching and thermal performance of 1200V 75mΩ Silicon Carbide (SiC) C3M™ MOSFET in a TO-247-4 package configured in a half bridge topology. The board is designed for characterizing E_ON and E_OFF losses and steady state thermal performance in Silicon Carbide MOSFETs. The board can be configured to run as a buck or boost converter in either synchronous or asynchronous modes. The PCB also supports replacing the SiC MOSFETs with TO-247-3 package components to allow for evaluation of either package. A full LTSpice model including parasitic elements that nearly matches the performance of the hardware is available for download.

This design allows measurement of:

• Timing (T_Delay-On; T_Delay-Off; T_Rise; T_Fall)
• Overshoot (V_DS-Max; I_D-Max)
• Speed (di/dt; dv/dt)
• Switching Loss (E_ON; E_OFF; E_RR)
• Efficiency during operation up to 2.5kW

Specifications

• Max DC Input / Output Voltage of 800V
• Max Power of 2.5kW @ 100kHz (limited by on-board inductor; higher levels possible with alternate inductor)
• Compatible with TO-247-4 and TO-247-3 SiC MOSFETs;
• Compatible with TO-247 and TO-220 SiC Schottky diodes
• Dedicated gate drivers and isolated power supplies for each C3M SiC MOSFET
• Optimized locations for scope probe measurements of drain current; V_GS; and V_DS and I_S
• Synchronous and asynchronous buck and boost topologies supported
• Kit includes two SMA to BNC adapters for measuring V_GS waveforms
• Includes heatsink; thermal clips and isolated thermal pads