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KIT-CRD-3DD12P

Product shot of Wolfspeed's KIT-CRD-3DD12P Evaluation Board.
Buck Boost Evaluation Board for 1200V Silicon Carbide C3M™ MOSFET in a TO-247-X Package

This evaluation board demonstrates the switching and thermal performance of 1200V 75mΩ Silicon Carbide (SiC) C3M™ MOSFET in a TO-247-4 package configured in a half bridge topology. The board is designed for characterizing EON and EOFF losses and steady state thermal performance in Silicon Carbide MOSFETs. The board can be configured to run as a buck or boost converter in either synchronous or asynchronous modes. The PCB also supports replacing the SiC MOSFETs with TO-247-3 package components to allow for evaluation of either package. A full LTSpice model including parasitic elements that nearly matches the performance of the hardware is available for download.

This design allows measurement of:

  • Timing (TDelay-On; TDelay-Off; TRise; TFall)
  • Overshoot (VDS-Max; ID-Max)
  • Speed (di/dt; dv/dt)
  • Switching Loss (EON; EOFF; ERR)
  • Efficiency during operation up to 2.5kW

Specifications

  • Max DC Input / Output Voltage of 800V
  • Max Power of 2.5kW @ 100kHz (limited by on-board inductor; higher levels possible with alternate inductor)
  • Compatible with TO-247-4 and TO-247-3 SiC MOSFETs;
  • Compatible with TO-247 and TO-220 SiC Schottky diodes
  • Dedicated gate drivers and isolated power supplies for each C3M SiC MOSFET
  • Optimized locations for scope probe measurements of drain current; VGS; and VDS and IS
  • Synchronous and asynchronous buck and boost topologies supported
  • Kit includes two SMA to BNC adapters for measuring VGS waveforms
  • Includes heatsink; thermal clips and isolated thermal pads
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
What's Included
  • Evaluation Board
  • Schematics
  • PCB Design File
  • Bill of Materials
  • Application Note
  • Detailed LTSpice model
  • Quick Start Video
Request Separately
  • Low Inductance Current Monitor
  • Mechanical Specifications
  • Email Request
Product Compatibility
  • C3M0075120K (included)
  • Any C3MxxxxxxxK/D SiC MOSFET up to 1200V
  • TO-247 and TO-220 SiC Schottky Diodes (for asynchronous topologies)

Documents, Tools & Support

kit crd 3dd12p block diagram
Si8261

4A, 5kV, Isolated Gate Driver in a stretched SO-6 package

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Si8261

4A, 5kV, Isolated Gate Driver in a stretched SO-6 package

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Isolated DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= +15V/-3V

Isolated DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= +15V/-3V

C3M0075120K

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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C3M0075120K

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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