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Blocking Voltage 1200 V
Current Rating at 25°C 30 A
Rds(on) at 25°C 75 mΩ
Package TO-247-3
Gate charge total 54 nC
Maximum junction temperature 150 °C
Reverse-Recovery Charge (Qrr) 58 pF
Reverse-Recover Time (Trr) 48 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0075120D


Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology.  Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications.  Download our LTspice models to get started or click here to request more information.

Features

  • Minimum of 1200V Vbr across entire operating temperature range
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Documents