33kW ANPC Bi-Directional Converter

CRD-33FF12N-K

Note Coming Soon.

1500V DC bus solar applications are rapidly growing due to the higher efficiency and higher power levels required in modern installations. The design utilizes the 3-level ANPC topology to achieve high efficiency and power density using Wolfspeed’s new CMHSA 1200V discrete SiC MOSFETs. The design is built as a 33kW single phase leg as a building block for a 3-phase 100kW system. Each switch position uses 3 discrete MOSFETs to achieve high power performance while minimizing system costs.

Specifications:

DC/AC and AC/DC bidirectional
Single Phase ANPC
High Power Density >6 kW/L
High Efficiency Design
- >99% Peak Efficiency in both inverter and PFC mode
DC-link Voltage range: 1100VDC-1500V DC
AC Input/Output:
- 380Vac
- 33kW max for PCS and Solar Inverter
Switching Frequency: 40kHz/60kHz
3 parallel discrete MOSFETs per switch position

Wolfspeed Power Reference Design CRD-33FF12N-K 33kW ANPC Bi-Directional Converter

Wolfspeed Power Reference Design CRD-33FF12N-K 33kW ANPC Bi-Directional Converter

Applications

Solar Inverter
PCS

What's Included

Reference design files for:

Main board
Controller Board
Aux Power Board

Test results and design documentation

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Mechanical Specifications

Product Compatibility

CMHSA040120K

Documents, Tools, & Support

Block Diagram
Technical & Sales Documents
Tools & Support

Block Diagram for Wolfspeed's 33kW ANPC Bi-Directional Converter

Block Diagram for Wolfspeed's 33kW ANPC Bi-Directional Converter

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

CMHSA040120K

1200 V, 47 mΩ, TO-247-4 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

CMHSA040120K

1200 V, 47 mΩ, TO-247-4 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

CMHSA040120K

1200 V, 47 mΩ, TO-247-4 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

CMHSA040120K

1200 V, 47 mΩ, TO-247-4 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0016120K

1200 V, 16 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0016120K

1200 V, 16 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

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