Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
2300 V Three-Phase Inverter
CRD200DA23N-GMA
The 2300 V three-phase inverter reference design demonstrates the design simplicity and scalability of Wolfspeed’s new 2300 V baseplate-less SiC power modules. The simple two-level design provides a starting point for system designers looking to take advantage of 1500 V DC bus architectures– providing a practical application example of PCB creepage/clearance distances together with optimal snubber implementation in a 200 kW building block. Based on Wolfspeed’s Gen 4 MOSFET technology, this reference design is suitable for renewable energy, energy storage, and high-capacity fast-charging sectors where improved system efficiency, durability, reliability, and scalability are paramount.
Benefits
- Enables 2 level operation with 1500 VDC link
- System scalability and reliability
- Reduced system complexity
- Ease of layout and assembly
Knowledge Center
As AI scales, a greater lens is on the upstream power sources that are expected to keep up with rapidly expanding data center deployments. Amperesand is helping build the cornerstone of tomorrow’s grid by developing highly reliable, medium voltage (MV) SiC-based solid state transformers. Read more to learn how Amperesand and Wolfspeed partnered to make it happen.
