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Product shot of the Dual Channel Differential Isolated Half Bridge Gate Driver Board

Dual Channel Differential Isolated Half Bridge Gate Driver Board

CGD1700HB2M-UNA
Wolfspeed’s CGD1700HB2M-UNA is a half bridge gate driver board for evaluation of Wolfspeed C3M SiC MOSFET’s and modules. This board can be used in conjunction with Wolfspeed CIL boards or Evaluation kits. The board includes 2W power supplies with undervoltage protection and reverse polarity protection. Each of the two gate drive channels features over-current protection, an active Miller clamp, and separate turn-on and turn-off gate resistors for effortlessly tuning switching speeds. The board includes circuitry to read the temperature from a Negative Temperature Coefficient (NTC) resistor when available. The gate driver board also features MMCX connectors to accurately measure high-side and low-side VGS with fiber optically isolated probes such as the TIVP1 from Tektronix®.

Specifications

  • DC bus voltage up to 1500 V
  • Texas Instruments UCC21710 gate driver
  • On-board 2 W isolated power supplies
  • User-configurable turn-on and turn-off gate resistors enabling switching loss optimization
  • On-board overcurrent; shoot-through prevention; and reverse polarity protection
  • Undervoltage protection
  • Isolated Analog to PWM Signal Function for NTC
  • Differential inputs for increased noise immunity
  • Fault and power indicator LEDs for instant visual feedback
What's Included
  • Reference Design Files
Applications
  • EV Fast Charging
  • Industrial Power
  • UPS
  • Induction Heating Welding
  • Industrial Motor Drives
  • Power Supplies
  • Solar & Renewable Energy
  • Grid Infrastructure

Documents, Tools, & Support

cgd1700hb2m una block diagram
UCC21710

Automotive ±10-A 5.7kV RMS single channel isolated gate driver for SiC/IGBT

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UCC21710

Automotive ±10-A 5.7kV RMS single channel isolated gate driver for SiC/IGBT

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DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/+15V

DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/+15V

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1200V Half Bridge Power Module Footprint Designed for SiC Power Density

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Knowledge Center

Design Resources

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