Wolfspeed's Gen 3 family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications
Wolfspeed offers a family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as Uninterruptible Power Supplies (UPS); motor drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more.
Based on the latest 3rd generation technology; Wolfspeed's 1200 V Silicon Carbide MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their applications. The 1200V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior.
Pairing Wolfspeed's 1200 V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size; weight; design complexity; and cost in most high-power applications.
A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.
High blocking voltage with industry leading low RDS(on) over temperature stability
Fast intrinsic diode with low reverse recovery charge (Qrr)
High-speed switching with low output capacitance
Low conduction losses over temperature
Avalanche ruggedness
Benefits
Improves system efficiency with lower switching loss
Reduces system size; weight; and cooling requirements
Increased power density
Easy to parallel and compatible with standard gate drive design
Applications
Solid State Circuit Breakers
Renewable Energy Inverters
High voltage DC/DC converters
Switch-Mode Power Supplies
Uninterruptible Power Supplies (UPS)
High Performance Welding Power Supplies
Auxiliary power supplies for High Voltage Systems
Documents, Tools & Support
Technical & Sales Documents
Tools & Support
Compliance
Documents
Document Type
Document Name
Last Updated
Application Notes
11/2021
Application Notes
01/2023
Application Notes
11/2023
Data Sheets
07/2023
Data Sheets
07/2023
Data Sheets
07/2022
Data Sheets
07/2023
Data Sheets
07/2023
Data Sheets
07/2023
Sales Sheets & Flyers
01/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Data center cooling systems account for 20-45% of power consumed by data centers. The efficiency of these cooling systems can be improved with silicon carbide leading to up to 50% reduction in system losses.
Use the SpeedFit™ Design Simulator to simulate a solar MPPT Boost Converter and see how you can achieve high efficiency and power density in solar systems even under elevated temperatures.