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  • 1200 V EMSWA Discrete MOSFETs

1200 V EMSWA Discrete MOSFETs

Automotive Qualified Discrete Silicon Carbide (SiC) MOSFETs in TSC (U2), TO-247-4, and TO-263-7 XL packages
Wolfspeed's newest family of 1200 V discrete SiC MOSFETs delivers unparalleled performance in onboard automotive applications. The EMSWA family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, expanding the usable design space for the engineer to tune and optimize the performance in the application. The EMSWA family provides improved Eon, Err, and Eoff losses compared to the E3M family of devices, while maintaining a low RDS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of onboard topologies. In addition to improved switching performance, the EMSWA family provides transient overvoltage capability, increased lifetime at elevated bus voltages, and wide gate voltage compatibility for simplified drop-in capability. As a part of the Automotive portfolio, the EMSWA family utilizes AEC-Q101 qualification and is PPAP capable.
Composite image of three of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFETs in TO-247-4, TO-263-7 XL, & TSC (U2) packages.
Composite image of three of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFETs in TO-247-4, TO-263-7 XL, & TSC (U2) packages.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 XL package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Composite image of three of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFETs in TO-247-4, TO-263-7 XL, & TSC (U2) packages.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 XL package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Composite image of three of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFETs in TO-247-4, TO-263-7 XL, & TSC (U2) packages.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 XL package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
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  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

1200 V EMSWA Discrete MOSFETs

No filters selected, showing all 12 products

1200 V EMSWA Discrete MOSFETs - Filter By

1200 V EMSWA Discrete MOSFETs

Product SKU
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Tjmin
Tjmax
Package
Qualification
Technology
EMSWA025120K
Coming
Soon
Coming Soon
1200 V
25 mΩ
-55 °C
175 °C
TO-247-4
Automotive
EMSWA
EMSWA025120J2
Coming
Soon
Coming Soon
1200 V
25 mΩ
-55 °C
175 °C
TO-263-7 XL
Automotive
EMSWA
EMSWA025120U2
Coming
Soon
Coming Soon
1200 V
25 mΩ
-55 °C
175 °C
TSC (U2)
Automotive
EMSWA
EMSWA036120K
Coming
Soon
Coming Soon
1200 V
36 mΩ
-55 °C
175 °C
TO-247-4
Automotive
EMSWA
EMSWA036120J2
Coming
Soon
Coming Soon
1200 V
36 mΩ
-55 °C
175 °C
TO-263-7 XL
Automotive
EMSWA
EMSWA036120U2
Coming
Soon
Coming Soon
1200 V
36 mΩ
-55 °C
175 °C
TSC (U2)
Automotive
EMSWA
EMSWA047120K
Coming
Soon
Coming Soon
1200 V
47 mΩ
-55 °C
175 °C
TO-247-4
Automotive
EMSWA
EMSWA047120J2
Coming
Soon
Coming Soon
1200 V
47 mΩ
-55 °C
175 °C
TO-263-7 XL
Automotive
EMSWA
EMSWA047120U2
Coming
Soon
Coming Soon
1200 V
47 mΩ
-55 °C
175 °C
TSC (U2)
Automotive
EMSWA
EMSWA065120K
Coming
Soon
Coming Soon
1200 V
65 mΩ
-55 °C
175 °C
TO-247-4
Automotive
EMSWA
EMSWA065120J2
Coming
Soon
Coming Soon
1200 V
65 mΩ
-55 °C
175 °C
TO-263-7 XL
Automotive
EMSWA
EMSWA065120U2
Coming
Soon
Coming Soon
1200 V
65 mΩ
-55 °C
175 °C
TSC (U2)
Automotive
EMSWA

End of Section

Product Details

Features

  • Automotive Qualified (AEC-Q101) and PPAP capable
  • Low Eon and Err
  • Soft body diode with low overshoot and ringing
  • Low RDS(on) temperature coefficient
  • High Ciss/Crss ratio
  • Wide gate voltage compatibility [-4 to 0 V / 15 to 18V]
  • High transient voltage compatibility
  • For U2 package: pin-to-pin compatible with other TSC packages

Benefits

  • Ideal for hard-switched applications
  • Lower losses enabling higher efficiency switching frequency, and cooling requirements
  • Enables system level price-performance optimization

Typical Applications

  • OBC & DC/DC converters
  • Fuel cell DC/DC converters
  • Fuel cell inverters
  • Onboard HVAC / Battery Thermal Management
  • Powertrain inverters
  • Auxiliary power supplies

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS ModelsSpeedVal Kit™ Modular Evaluation Platform

Technical Support

Power Applications Forum

Featured Documents

Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
01/2025
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

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