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  • 1200 V CMHSA Discrete MOSFETs
  • CMHSA060120U2

CMHSA060120U2

1200 V, 65 mΩ, TSC (U2) package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET
Note Coming Soon.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Featured Resources
  • Tools & Support
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

Display All SKUs in Product Family (12)

1200 V CMHSA Discrete MOSFETs

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1200 V CMHSA Discrete MOSFETs

Product SKU
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Tjmin
Tjmax
Package
Qualification
Technology
CMHSA060120U2
Coming
Soon
Coming Soon
1200 V
65 mΩ
-40 °C
175 °C
TSC (U2)
Industrial
CMHSA

End of Section

Ordering & Compliance

CMHSA060120U2 Ordering

Part Number
CMHSA060120U2
Coming
Soon
Order StatusComing Soon
PackageTSC (U2)

CMHSA060120U2 Compliance

California Prop 65Learn More
ECCN
EAR99

Related Documents

CMHSA060120U2 Related Documents

Soldering & Handling
PRD-05653: Recommended Solder Profiles for Power Products
Packing & Shipping
Power Product Packing & Shipping Reference Guide

Product Details

Features

  • Low Eon and Err
  • Soft body diode with low overshoot and ringing
  • Low RDS(on) temperature coefficient
  • High Ciss/Crss ratio
  • Wide gate voltage compatibility [-4 to 0 V / 15 to 18V]
  • High transient voltage compatibility
  • Pin-to-pin compatible with other TSC packages

Benefits

  • Ideal for hard-switched applications
  • Lower losses enabling higher efficiency switching frequency, and cooling requirements
  • Enables system level price-performance optimization

Typical Applications

  • Low voltage industrial drives
  • Power supply
  • Servo drives
  • Fast charging
  • Energy storage systems
  • Solar – commercial applications

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS ModelsSpeedVal Kit™ Modular Evaluation Platform

Technical Support

Power Applications Forum

Featured Documents

Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

Documents, Tools & Support

Display All SKUs in Product Family (12)
  • Technical & Sales Documents
  • Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters
New
01/2025
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-08367: EV Charging Power Topologies Design Guidebook
01/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
Application Notes
PRD-05641: Designing with Silicon Carbide in Energy Storage Applications
02/2022
Test Report
PRD-02344: SiC MOSFET Short-Circuit Protection Using Skyworks™ Si828x Gate Driver
03/2022
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
01/2025
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors
11/2024
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025

Knowledge Center

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Powerful Perspectives

Partnering for Maximum Impact: An Interview with Paul Wheeler

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PowerMakers

Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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