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  • Discrete Silicon Carbide MOSFETs
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  • E4M0060075U2

E4M0060075U2

750 V, 60 mΩ, U2 (TSC) package, Automotive qualified, Discrete Silicon Carbide (SiC) MOSFET
Download Data Sheet
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Featured Resources
  • Tools & Support
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

Display All SKUs in Product Family (30)
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Product SKU
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
Technology
E4M0060075U2
New
Active
750 V
60 mΩ
36 A
175 °C
U2 (TSC)
Automotive
E4M

Ordering & Compliance

E4M0060075U2 Ordering

Part Number
E4M0060075U2
New
Order Status
Active
Package
U2 (TSC)

E4M0060075U2 Compliance

Halogen Free
Yes
RoHS Declaration
Download
REACH Declaration
Download
California Prop 65
Learn More
ECCN
EAR99
Moisture Sensitivity Level
MSL 1

Related Documents

E4M0060075U2 Related Documents

Soldering & Handling
PRD-05653: Recommended Solder Profiles for Power Products
Packing & Shipping
Power Product Packing & Shipping Reference Guide

Product Details

Features

  • Industry standard Top Side Cooled (TSC) package
  • High power dissipation capability
  • Optimized package with separate driver source pin
  • High creepage package design
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Automotive Qualified (AEC-Q101) and PPAP Capable

Benefits

  • Increase power density
  • Reduce cooling requirements
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Increase system switching frequency

Applications

  • Motor control
  • EV battery chargers
  • High voltage DC/DC converters

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS ModelsSpeedVal Kit™ Modular Evaluation Platform22 kW Bi-Directional CLLC Utilizing IMS Board6.6 kW Bi-Directional EV On-Board Charger

Technical Support

Power Applications Forum

Featured Application Notes

PRD-08182: Designing with Wolfspeed Top Side Cooled Packages
New
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-08367: EV Charging Power Topologies Design Guidebook

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

15 Documents Available
Document Type
Document Name
Last Updated
Data Sheets
E4M0060075U2
New
10/2025
Application Notes
PRD-08999: Turn-Off Gate Voltage Considerations for SiC MOSFETs
12/2024
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
White Papers
Designed to Last, Even in the Harshest Environments
New
11/2025
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
01/2025
Product Catalog
Power Product Line Card
01/2025
Sales Sheets & Flyers
Wolfspeed 650 V MOSFET E-Series Product Brief
07/2022
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Packing & Shipping
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
11/2025

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