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600 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C3D20060D
600 V, 20 A, TO-247-3 package, Gen 3 Discrete SiC Schottky Diode
Wolfspeed's 600 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

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600 V Discrete Silicon Carbide Schottky Diodes

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600 V Discrete Silicon Carbide Schottky Diodes

Product SKU
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Data Sheet
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Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Recommended For New Design?
C3D20060D
600 V
20 A
Gen 3
1.5 per leg
20 A
25 nC per leg
500 W
TO-247-3
Industrial
Yes

Product Details

Features
  • Low forward voltage (Vf) drop over temperature
  • Zero reverse-recovery charge for fast switching operations
  • Robust MPS technology
  • High reverse-voltage blocking capability
Benefits
  • Improves System Efficiency with lower conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

Documents, Tools & Support

Documents

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Application Notes
Application Notes
Data Sheets
Product Catalog
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Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Technical SupportPower Applications Forum

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