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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

1000 V Discrete Silicon Carbide MOSFETs

1000 V Silicon Carbide (SiC) power MOSFETs for fast switching power devices
Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems; industrial power supplies; and renewable energy systems. The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance; very low output capacitance; and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions; Wolfspeed silicon carbide power device technology enables increased system power density; higher switching frequencies; reduced component-count; and reduced size of components like inductors; capacitors; filters & transformers.

Parametric Data

1000 V Discrete Silicon Carbide MOSFETs

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1000 V Discrete Silicon Carbide MOSFETs - Filter By

1000 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Maximum Junction Temperature
Package
Qualification
C3M0065100K
Active
1000 V
65 mΩ
35 A
150 °C
TO-247-4
Industrial
C3M0120100K
Active
1000 V
120 mΩ
22 A
150 °C
TO-247-4
Industrial
C3M0065100J
Active
1000 V
65 mΩ
35 A
150 °C
TO-263-7
Industrial
C3M0120100J
Active
1000 V
120 mΩ
22 A
150 °C
TO-263-7
Industrial

Product Details

Features
  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • High-speed switching with low output capacitance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Kelvin source pin to reduce switching losses and ringing
Benefits
  • Enables a reduction in overall system cost
  • Improves system efficiency while decreasing system-size
  • Enables a 30% reduction in component-count while achieving more than 3x increase in power density and a 33% increase in output power
  • Enables hard switching topologies
Typical Applications
  • Industrial power supplies
  • Renewable energy systems
  • Fast electric vehicle charging systems
  • Onboard electric vehicle charging

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
01/2024
Application Notes
01/2024
Application Notes
12/2023
Application Notes
11/2023
Application Notes
05/2023
Application Notes
01/2023
Application Notes
10/2022
Application Notes
09/2022
Application Notes
11/2021
Test Report
03/2022
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
View Now  Videos
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