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1000 V Discrete Silicon Carbide MOSFETs

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1000 V Silicon Carbide (SiC) power MOSFETs for fast switching power devices
Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems; industrial power supplies; and renewable energy systems. The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance; very low output capacitance; and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions; Wolfspeed silicon carbide power device technology enables increased system power density; higher switching frequencies; reduced component-count; and reduced size of components like inductors; capacitors; filters & transformers.

Products

1000 V Discrete Silicon Carbide MOSFETs

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1000 V Discrete Silicon Carbide MOSFETs

Product SKU
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Request Sample
Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0065100K
1000 V
65 mΩ
Gen 3
35 A
35 nC
60 pF
113.5 W
150 °C
TO-247-4
Yes
Industrial
C3M0120100K
1000 V
120 mΩ
Gen 3
22 A
21.5 nC
40 pF
83 W
150 °C
TO-247-4
Yes
Industrial
C3M0065100J
1000 V
65 mΩ
Gen 3
35 A
35 nC
60 pF
113.5 W
150 °C
TO-263-7
Yes
Industrial
C3M0120100J
1000 V
120 mΩ
Gen 3
22 A
21.5 nC
40 pF
83 W
150 °C
TO-263-7
Yes
Industrial

Product Details

Features
  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • High-speed switching with low output capacitance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Kelvin source pin to reduce switching losses and ringing
Benefits
  • Enables a reduction in overall system cost
  • Improves system efficiency while decreasing system-size
  • Enables a 30% reduction in component-count while achieving more than 3x increase in power density and a 33% increase in output power
  • Enables hard switching topologies
Applications
  • Industrial power supplies
  • Renewable energy systems
  • Fast electric vehicle charging systems
  • Onboard electric vehicle charging

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Test Report
Data Sheets
Data Sheets
Data Sheets
Data Sheets
Product Catalog
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum
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