Skip to Main Content
  • English
  • 简体中文
  • 繁體中文
View Cart

1000 V Discrete Silicon Carbide MOSFETs

Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1000 V, 65 mΩ, 35 A, TO-263-7 package, Gen 3 Discrete SiC MOSFET

Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems, industrial power supplies, and renewable energy systems.

The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance, very low output capacitance, and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions, Wolfspeed silicon carbide power device technology enables increased system power density, higher switching frequencies, reduced component-count, and reduced size of components like inductors, capacitors, filters &amp, transformers.


1000 V Discrete Silicon Carbide MOSFETs

No filters selected, showing all 1 products

1000 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Recommended For New Design?
1000 V
65 mΩ
Gen 3
35 A
35 nC
60 pF
113.5 W
150 °C

Product Details

  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • High-speed switching with low output capacitance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Kelvin source pin to reduce switching losses and ringing
  • Enables a reduction in overall system cost
  • Improves system efficiency while decreasing system-size
  • Enables a 30% reduction in component-count while achieving more than 3x increase in power density and a 33% increase in output power
  • Enables hard switching topologies
  • Industrial power supplies
  • Renewable energy systems
  • Fast electric vehicle charging systems
  • Onboard electric vehicle charging

Documents, Tools & Support


Document Type
Document Name
Application Notes
Application Notes
Application Notes
User Guide
Test Report
Data Sheets
Product Catalog
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

Knowledge Center

View All
Renewable Energy

Elevating Energy: How Silicon Carbide Transforms Solar and Energy Storage Systems

Now more than ever, engineers are being asked to design residential, commercial, and industrial solar energy systems that are compact, lightweight, and simple to set up. All of this can be achieved, including a 3% higher efficiency boost, with Wolfspeed Silicon Carbide. Join this webinar where our expert will demonstrate how Wolfspeed Silicon Carbide outperforms, increases power density, and lowers overall system costs.
Register Now  Webinars

What’s Under the Hood?

Shine a light under the hoods of today's most advanced EVs and learn about the technology pushing the EV revolution ahead of the curve with Wolfspeed's "What's Under the Hood?" eBook that is designed to educate, inform and inspire electric vehicle designers and drivers. 
Continue Reading  Technical Articles


Wolfspeed Logo

Social Media

  • Facebook
  • Instagram
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.