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EPM3-1200-R013D

EPM3-1200-R013D
1200 V, 13 mΩ, 160 A, Gen 3+ Bare Die SiC MOSFET
Wolfspeed’s Generation 3+ of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for applications in automotive drivetrain and motor drives.

Products

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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
EPM3-1200-R013D
1200 V
13 mΩ
160 A
226 pF
1259 nC
34 ns
175 °C
Gen 3+
Yes

Product Details

Features
  • Automotive Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
Application
  • Automotive Drivetrain
  • Motor Drives
  • Solid State Circuit Breaker
  • Resonant Topologies

Documents, Tools & Support

Display All SKUs in Product Family (3)

Documents

Document Type
Document Name
Last Updated
Application Notes
01/2023
Application Notes
11/2023
Application Notes
11/2021
Sales Sheets & Flyers
03/2022
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

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