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1200V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

1200V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

EPM3-1200-0017C.D ALT
Wolfspeed's Automotive qualified Gen 3 family of 1200V Silicon Carbide MOSFETs are optimized for high power applications

Wolfspeed continues to lead in silicon carbide with our first Automotive 1200V E-Series line of Bare Die Silicon Carbide (SiC) MOSFETs. The portfolio is fully automotive qualified, with high blocking voltage with the industry-leading low RDS(ON) over temperature stability, enabling low conduction losses and highest figures of merit in the most demanding applications. These devices are optimized for use in high power applications such as automotive drive trains, motor drives, solid state circuit breakers, resonant topologies, and more.

Based on the latest 3rd generation technology; Wolfspeed’s 1200V Bare Die SiC MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their application. The 1200V MOSFETs are designed for low RDS(ON), are easy to parallel and compatible with standard gate drive design. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, and cooling requirements.

A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recover Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
EPM3-1200-0017D1
1200 V
17 mΩ
134 A
221 pF
1242 nC
53 ns
175 °C
Gen 3
Yes
EPM3-1200-0017D
1200 V
17 mΩ
134 A
220 pF
1100 nC
52 ns
175 °C
Gen 3
Yes
Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recover Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
EPM3-1200-0017D1
1200 V
17 mΩ
134 A
221 pF
1242 nC
53 ns
175 °C
Gen 3
Yes
EPM3-1200-0017D
1200 V
17 mΩ
134 A
220 pF
1100 nC
52 ns
175 °C
Gen 3
Yes
Features
  • Automotive Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
Application
  • Automotive Drivetrain
  • Motor Drives
  • Solid State Circuit Breaker
  • Resonant Topologies
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