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1200 V Bare Die SiC MOSFETs – Gen 2

Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
CPM2-1200-0080A
1200 V, 80 mΩ, 36 A, Gen 2 Bare Die SiC MOSFET
NOTE: Not recommended for new designs. 1200 V Bare Die Silicon Carbide MOSFETs – Gen 3 is the recommended replacement.

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1200 V Bare Die SiC MOSFETs – Gen 2

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1200 V Bare Die SiC MOSFETs – Gen 2

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM2-1200-0080A
1200 V
80 mΩ
36 A
71 nC
92 pF
152 nC
24 ns
175 °C
Gen 2
No

Product Details

Features
  • Robust intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
Applications
  • Renewable energy Inverters
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

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Documents

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Application Notes
Application Notes
Application Notes
Data Sheets
Product Catalog
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Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Technical SupportPower Applications Forum

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