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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
CPM3-1200-0075A
1200 V, 75 mΩ, 30 A, Gen 3 Bare Die SiC MOSFET
Wolfspeed offers a family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage DC/DC converters, and more. Based on the latest 3rd generation technology, Wolfspeed's 1200 V Silicon Carbide MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their applications. The 1200V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Pairing Wolfspeed's 1200 V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity, and cost in most high-power applications. A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.

Products

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-1200-0075A
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
Yes

Product Details

Features
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Applications
  • Solid State Circuit Breakers
  • Renewable Energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems

Documents, Tools & Support

Display All SKUs in Product Family (6)

Documents

Document Type
Document Name
Application Notes
Application Notes
Application Notes
Data Sheets
Sales Sheets & Flyers
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

Knowledge Center

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Power
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Industrial Drives

Benefits of Designing with Wolfspeed Silicon Carbide in Low Voltage Motor Drives

Wolfspeed evaluates SiC in industrial low voltage motor drives at three different power levels to evaluate efficiency improvements, and compares improvements realized when smaller heat sinks are combined with SiC.
Continue Reading  Technical Articles

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