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CPM3-1200-0075A

Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
CPM3-1200-0075A
1200 V, 75 mΩ, 30 A, Gen 3 Bare Die SiC MOSFET
Wolfspeed offers a family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage DC/DC converters, and more. Based on the latest 3rd generation technology, Wolfspeed's 1200 V Silicon Carbide MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their applications. The 1200V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Pairing Wolfspeed's 1200 V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity, and cost in most high-power applications. A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.

Products

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Status
CPM3-1200-0075A
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
Active

Product Details

Features
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Applications
  • Solid State Circuit Breakers
  • Renewable Energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems

Documents, Tools & Support

Display All SKUs in Product Family (6)

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Data Sheets
07/2023
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

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Design Resources

The Silicon Carbide Landscape and Advantage

Wolfspeed’s silicon carbide expert Guy Moxey kicks of Wolfspeed’s 2024 Designer’s Guide by exploring the proliferation of silicon carbide across applications, including electric vehicles, industrial motor drives and e-mobility, and ways Wolfspeed is meeting growing global demand.
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Silicon Carbide Device Modeling

Learn how designers new to silicon carbide can leverage Wolfspeed’s design support tools to generate models that solve system design challenges. During this session learn which Wolfspeed design tools are best suited to your application.
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