Features
- 1200-Volt Schottky Rectifier
- Zero Forward and Reverse Recovery
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive temperature coefficient on VF
1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 4
CPW4-1200-S010B
1200 V, 10 A, Gen 4 Bare Die SiC Schottky Diode
Reduce system size, weight, and cooling requirements with Wolfspeed’s Gen 4 family of 1200 V Silicon Carbide (SiC) Schottky diodes. These diodes provide extremely fast switching, zero forward and reverse recovery, and high-frequency operation. Optimized for high frequency power electronics applications including electric vehicle (EV) charging, commercial vehicles, solar systems, power converters, Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS) and more.
Products
1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 4
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1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 4
Product SKU | Buy Online | Data Sheet | Qualification | Blocking Voltage | Current Rating | Total Capacitive Charge (QC (typ)) | Maximum Junction Temperature | Generation | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|
CPW4-1200-S010B | Industrial | 1200 V | 10 A | 52 nC | 175 °C | Gen 4 | Yes |
Product Details
Benefits
- Reduces system size; weight; and cooling requirements
- Increased power density
- Improved system efficiency at high switching frequencies
- Parallel mode operation possible
Applications
- Fast EV charging
- Commercial vehicles
- Solar systems
- Power Converters
- Switch Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
|
| Sales Terms |
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