Features
- 1200-Volt Schottky Rectifier
- Zero Forward and Reverse Recovery
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive temperature coefficient on VF
1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 4
CPW4-1200-S010B
1200 V; 10 A; Gen 4 Bare Die Silicon Carbide (SiC) Schottky Diode
Reduce system size, weight, and cooling requirements with Wolfspeed’s Gen 4 family of 1200 V Silicon Carbide (SiC) Schottky diodes. These diodes provide extremely fast switching; zero forward and reverse recovery; and high-frequency operation. Optimized for high frequency power electronics applications including electric vehicle (EV) charging; commercial vehicles; solar systems, power converters; Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS) and more.
Products
1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 4
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1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 4
Product SKU | Buy Online | Data Sheet | Qualification | Blocking Voltage | Current Rating | Total Capacitive Charge (QC (typ)) | Maximum Junction Temperature | Generation | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|
CPW4-1200-S010B | Industrial | 1200 V | 10 A | 52 nC | 175 °C | Gen 4 | Yes |
Product Details
Benefits
- Reduces system size; weight; and cooling requirements
- Increased power density
- Improved system efficiency at high switching frequencies
- Parallel mode operation possible
Applications
- Fast EV charging
- Commercial vehicles
- Solar systems
- Power Converters
- Switch Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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Document Type | Document Name |
|---|---|
| Data Sheets | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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| Sales Terms |
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