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  • Discrete Silicon Carbide MOSFETs
  • 1200 V Discrete Silicon Carbide MOSFETs

1200 V Discrete Silicon Carbide MOSFETs

Broadest portfolio of 1200 V Silicon Carbide (SiC) power MOSFETs in the industry

Wolfspeed's family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power applications such as Uninterruptible Power Supply (UPS), motor controls & drives, switched-mode power supplies, energy storage systems, EV fast charging, high-voltage DC/DC converters and more.

Based on 3rd generation technology, the wide variety of on-resistances and package options enables designers to select the right part for their applications.

Pairing Wolfspeed's 1200 V Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency for demanding applications.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

1200 V Discrete Silicon Carbide MOSFETs

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1200 V Discrete Silicon Carbide MOSFETs - Filter By

1200 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
Technology
C3M0016120K
Active
1200 V
16 mΩ
115 A
175 °C
TO-247-4
Industrial
C3M
C3M0016120D
Active
1200 V
16 mΩ
115 A
175 °C
TO-247-3
Industrial
C3M
C3M0016120K1
Active
1200 V
16 mΩ
125 A
175 °C
TO-247-4 LP
Industrial
C3M
C3M0021120D
Active
1200 V
21 mΩ
81 A
175 °C
TO-247-3
Industrial
C3M
C3M0021120K
Active
1200 V
21 mΩ
100 A
175 °C
TO-247-4
Industrial
C3M
C3M0021120K1
Active
1200 V
21 mΩ
104 A
175 °C
TO-247-4 LP
Industrial
C3M
C3M0021120J2
Active
1200 V
21 mΩ
114 A
175 °C
TO-263-7 XL
Industrial
C3M
C3M0032120K
Active
1200 V
32 mΩ
63 A
175 °C
TO-247-4
Industrial
C3M
C3M0032120D
Active
1200 V
32 mΩ
63 A
175 °C
TO-247-3
Industrial
C3M
C3M0032120K1
Active
1200 V
32 mΩ
67 A
175 °C
TO-247-4 LP
Industrial
C3M
C3M0032120J1
Active
1200 V
32 mΩ
68 A
150 °C
TO-263-7 XL
Industrial
C3M
C3M0032120J2
Active
1200 V
32 mΩ
74 A
175 °C
TO-263-7 XL
Industrial
C3M
C3M0040120K1
Active
1200 V
40 mΩ
57 A
175 °C
TO-247-4 LP
Industrial
C3M
C3M0040120J2
Active
1200 V
40 mΩ
63 A
175 °C
TO-263-7 XL
Industrial
C3M
C3M0040120J1
Active
1200 V
40 mΩ
64 A
150 °C
TO-263-7 XL
Industrial
C3M
C3M0040120D
Active
1200 V
40 mΩ
66 A
175 °C
TO-247-3
Industrial
C3M
C3M0040120K
Active
1200 V
40 mΩ
66 A
175 °C
TO-247-4
Industrial
C3M
C3M0075120J
Active
1200 V
75 mΩ
30 A
150 °C
TO-263-7
Industrial
C3M
C3M0075120D
Active
1200 V
75 mΩ
30 A
150 °C
TO-247-3
Industrial
C3M
C3M0075120K
Active
1200 V
75 mΩ
32 A
150 °C
TO-247-4
Industrial
C3M
C3M0075120K-A
Active
1200 V
75 mΩ
32 A
175 °C
TO-247-4
Industrial
C3M
C3M0075120D-A
Active
1200 V
75 mΩ
32 A
175 °C
TO-247-3
Industrial
C3M
C3M0075120K1
Active
1200 V
75 mΩ
32 A
175 °C
TO-247-4 LP
Industrial
C3M
C3M0075120J2
Active
1200 V
75 mΩ
34 A
175 °C
TO-263-7 XL
Industrial
C3M
C3M0160120D
Active
1200 V
160 mΩ
17 A
150 °C
TO-247-3
Industrial
C3M
C3M0160120J
Active
1200 V
160 mΩ
17 A
150 °C
TO-263-7
Industrial
C3M
C3M0160120K1
Active
1200 V
160 mΩ
18 A
175 °C
TO-247-4 LP
Industrial
C3M
C3M0350120J
Active
1200 V
350 mΩ
7.2 A
150 °C
TO-263-7
Industrial
C3M
C3M0350120D
Active
1200 V
350 mΩ
7.6 A
150 °C
TO-247-3
Industrial
C3M
C3M0016120U2
Coming
Soon
Coming Soon
1200 V
16 mΩ
125 A
175 °C
TSC (U2)
Industrial
C3M
C3M0021120U2
Coming
Soon
Coming Soon
1200 V
21 mΩ
114 A
175 °C
TSC (U2)
Industrial
C3M
C3M0032120U2
Coming
Soon
Coming Soon
1200 V
32 mΩ
74 A
175 °C
TSC (U2)
Industrial
C3M
C3M0040120U2
Coming
Soon
Coming Soon
1200 V
40 mΩ
63 A
175 °C
TSC (U2)
Industrial
C3M
C3M0075120U2
Coming
Soon
Coming Soon
1200 V
75 mΩ
34 A
175 °C
TSC (U2)
Industrial
C3M
C2M0025120D
NRND
1200 V
25 mΩ
63 A
150 °C
TO-247-3
Industrial
C2M

End of Section

Product Details

Features

  • Stable RDS(ON) over temperature
  • Available in package options with separate Kelvin source pin
  • Extremely fast switching
  • Reduction of heat-sink requirements

 

Benefits

  • Easier to drive (+15V gate drive)
  • Improved system-level efficiency
  • Rugged body diode (no need for external diode)
  • Avalanche ruggedness

Typical Applications

  • Solar inverters and energy storage
  • Onboard and fast DC EV-Charging Systems
  • Motor control and drives
  • Welding and inductive heating
  • Auxiliary power supplies
  • High-voltage DC/DC converters

 

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS ModelsSpeedVal Kit™ Modular Evaluation Platform

Technical Support

Power Applications Forum

Featured Application Notes

PRD-08182 Designing with Wolfspeed Top Side Cooled Packages
New
PRD-08367: EV Charging Power Topologies Design Guidebook
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

21 Documents Available
Document Type
Document Name
Last Updated
Application Notes
PRD-08182 Designing with Wolfspeed Top Side Cooled Packages
New
08/2025
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters
01/2025
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-08367: EV Charging Power Topologies Design Guidebook
01/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
Application Notes
PRD-05641: Designing with Silicon Carbide in Energy Storage Applications
02/2022
Test Report
PRD-02344: SiC MOSFET Short-Circuit Protection Using Skyworks™ Si828x Gate Driver
03/2022
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
01/2025
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors
11/2024
Product Catalog
Power Product Line Card
01/2025
Sales Sheets & Flyers
Wolfspeed Silicon Carbide 1200 V MOSFETs Product Brief
06/2023
Sales Sheets & Flyers
CRD30DD12N-K One Page Overview
03/2022
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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