Wolfspeed 1700 V Silicon Carbide (SiC) MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions; Wolfspeed Silicon Carbide technology enables increased system power density; higher switching frequencies; smaller designs; cooler components; reduced size of components like inductors; capacitors; filters & transformers; and overall cost benefits.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C2M0045170D | 1700 V | 45 mΩ | Gen 2 | 75 A | 200 nC | 171 pF | 520 W | 150 °C | TO-247-3 | Yes | Industrial |
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| Application Notes | |
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| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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| Sales Terms |
