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3300 V Bare Die Silicon Carbide MOSFETs

Wolfspeed CPM3-3300-R050A Silicon Carbide MOSFET Gen 3
Wolfspeed's family of 3300 V Silicon Carbide MOSFETs offer high reliability and ruggedness for high power applications
Technical Support Forum
Wolfspeed extends its Silicon Carbide technology leadership with the introduction of 3300 V Silicon Carbide Bare Die MOSFETs, enabling high system efficiency and smaller power dense systems with high reliability. The 3300 V Silicon Carbide MOSFET is optimized for use in high power applications such as rail traction, heavy duty equipment, industrial UPS, industrial motor drives, and more.


3300 V Bare Die Silicon Carbide MOSFETs

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3300 V Bare Die Silicon Carbide MOSFETs

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Recommended For New Design?
3300 V
53 mΩ
52 A
255 nC
140 pF
2.5 nC
124 ns
175 °C
Gen 3 MOS

Product Details

  • High blocking voltage with Low RDS(on)
  • Easy to Parallel and Simple to Drive
  • Temperature-Independent High-Speed Switching
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Avalanche Ruggedness
  • Industry Leading reliable SiC MOSFET Technology
  • Higher Temperature Operation
  • Enables Higher Switching Frequency
  • Higher System Efficiency
  • Reduced System Size, Weight and Cooling
  • Rail Traction
  • Industrial Motor Drives
  • Industrial UPS
  • Solid State Circuit Breaker
  • Heavy Duty Equipment
  • Pulsed Power

3300 V Silicon Carbide Portfolio Overview

Documents, Tools & Support


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