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600 V Discrete Silicon Carbide Schottky Diodes

Image that includes both the front and back of the TO-263-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3D08060G
600 V, 8 A, TO-263-2 package, Gen 3 Discrete SiC Schottky Diode
Wolfspeed's 600 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

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600 V Discrete Silicon Carbide Schottky Diodes

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600 V Discrete Silicon Carbide Schottky Diodes

Product SKU
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Data Sheet
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Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
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Recommended For New Design?
C3D08060G
600 V
8 A
Gen 3
1.5 V
8 A
21 nC per leg
107 W
TO-263-2
Industrial
Yes

Product Details

Features
  • Low forward voltage (Vf) drop over temperature
  • Zero reverse-recovery charge for fast switching operations
  • Robust MPS technology
  • High reverse-voltage blocking capability
Benefits
  • Improves System Efficiency with lower conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Technical SupportPower Applications Forum

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Wolfspeed evaluates SiC in industrial low voltage motor drives at three different power levels to evaluate efficiency improvements, and compares improvements realized when smaller heat sinks are combined with SiC.
Continue Reading  Technical Articles

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