- Low forward voltage (Vf) drop over temperature
- Zero reverse-recovery charge for fast switching operations
- Robust MPS technology
- High reverse-voltage blocking capability
Wolfspeed’s 600 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Recommended For New Design?
1.5 V per leg
21 nC per leg
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs