Features
- Low On-State Resistance over Temperature
- Low Parasitic Capacitances
- Fast Diode with ultra low reverse recovery
- High Temperature Operation (Tj = 175°C)
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V Silicon Carbide MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V SiC MOSFET is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Recommended For New Design? |
---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM3-0650-0015A | 650 V | 15 mΩ | 120 A | 190 nC | 290 pF | 510 nC | 22 ns | 175 °C | Gen 3 | Yes |
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Application Notes | |
Application Notes | |
Product Catalog | |
Sales Sheets & Flyers | |
Sales Terms | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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