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650 V Bare Die Silicon Carbide Schottky Diodes – Gen 2

Product rendering of a Wolfspeed Silicon Carbide Bare Die Schottky diode.
CPW2-0650-S010B
650 V, 10 A, Gen 2 Bare Die SiC Schottky Diode
Wolfspeed's Gen 2 family of 650 V Silicon Carbide (SiC) Schottky diodes feature extremely fast switching, zero forward &, reverse recovery, temperature-independent switcing behavior, and high-frequency operation. Optimized for use in high power applications like Switch Mode Power Supplies (SMPS), Boost diodes in PFC or DC/DC stages, Free Wheeling Diodes in Inverter stages, AC/DC converters, solar energy, and more.

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650 V Bare Die Silicon Carbide Schottky Diodes – Gen 2

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650 V Bare Die Silicon Carbide Schottky Diodes – Gen 2

Product SKU
Buy Online
Data Sheet
Qualification
Blocking Voltage
Current Rating
Total Capacitive Charge (QC (typ))
Maximum Junction Temperature
Generation
Recommended For New Design?
CPW2-0650-S010B
Industrial
650 V
10 A
24 nC
175 °C
Gen 2
Yes

Product Details

Features
  • 650-Volt Schottky Rectifier
  • Zero Forward and Reverse Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive temperature coefficient on VF
Benefits
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Parallel mode operation possible
Applications
  • Switch Mode Power Supplies (SMPS)
  • Boost diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter stages
  • AC/DC converters
  • Solar energy systems

Documents, Tools & Support

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Documents

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Application Notes
Data Sheets
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

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Power
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Benefits of Designing with Wolfspeed Silicon Carbide in Low Voltage Motor Drives

Wolfspeed evaluates SiC in industrial low voltage motor drives at three different power levels to evaluate efficiency improvements, and compares improvements realized when smaller heat sinks are combined with SiC.
Continue Reading  Technical Articles

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