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650 V Discrete Silicon Carbide Schottky Diodes

Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
650 V, 2 A, TO-252-2 package, Gen 3 Discrete SiC Schottky Diode
Wolfspeed’s 650 V Silicon Carbide (SiC) Schottky diode technology is optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, and consumer electronics.


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650 V Discrete Silicon Carbide Schottky Diodes

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650 V Discrete Silicon Carbide Schottky Diodes

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650 V
2 A
Gen 3
1.5 V
2 A
4.8 nC
39.5 W

Product Details

  • Lowest forward voltage (Vf) drop over temperature in the industry
  • Zero reverse-recovery charge (Qrr) for ultra-fast switching operations
  • Robust MPS technology with high surge capability
  • High reverse-voltage blocking capability
  • Direct drop-in replacement for current silicon diodes and other silicon carbide diodes
  • Improves System Efficiency with lower conduction loss
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Technical SupportPower Applications Forum

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