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CPM3-0900-0065A

CPM3-0900-0065A
900 V, 65 mΩ, 32 A, Gen 3 Bare Die SiC MOSFET
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology by introducing the most advanced SiC MOSFET technology, the industry’s first 900 V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900 V platform enables smaller, lighter, and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

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900 V Bare Die Silicon Carbide MOSFETs – Gen 3

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900 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-0900-0065A
900 V
65 mΩ
32 A
33 nC
70 pF
220 nC
22 ns
175 °C
Gen 3
Yes

Product Details

Features
  • Minimum of 900V Vbr across entire operating temperature range
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
Benefits
  • High-voltage; high-temperature; and high-humidity resistance enables true outdoor application for solar power conversion and off-board charging
  • Improves system efficiency with significantly lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Enables increased power density
  • Easy to parallel and compatible with standard gate drive designs
Applications
  • Solar inverters
  • Motor Drives
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • Solid State Circuit Breakers
  • Off Board Chargers

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2021
Application Notes
01/2023
Application Notes
11/2023
Product Catalog
02/2024
Sales Terms
12/2021
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024
Technical SupportPower Applications Forum

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