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An aerial view of a Solar Energy farm represents how Wolfspeed Silicon Carbide makes an excellent choice for solar power applications.
Renewable Energy

Solar Power

Wolfspeed’s devices offer field-proven reliability with 98% efficiency even in the most corrosive and remote environments.

Wolfspeed Silicon Carbide for Solar Power Systems

The future of sustainability is led by responsible power generation — and solar power is one of the fastest-growing options for consumers and industrial users alike. It’s easy to see why when you consider that in a single hour, the amount of power from the sun that strikes Earth is more than the entire world consumes in a year. That’s a tantalizing notion to systems designers seeking to harvest the maximum power out of this most visible of renewable energy sources. But harnessing this incredible power takes precision and reliability — which is what makes Wolfspeed Silicon Carbide (SiC) an excellent choice for solar power system applications.

Wolfspeed CRD300DA12E-XM3 Reference Design
Wolfspeed's 300kW XM3 Three-Phase Inverter Reference Design

Wolfspeed Silicon Carbide solutions for residential solar power

Wolfspeed Silicon Carbide (SiC) is equally at home in commercial or residential solar power applications. Using a Wolfspeed Silicon Carbide MOSFET in place of a traditional silicon MOSFET, for example, helps create a lighter, smaller, and more efficient solar inverter. This means fewer system losses and a lower overall cost per watt compared with traditional silicon.

For solar power you can rely on, choose Wolfspeed Silicon Carbide

To make solar a viable alternative to fossil-fuel–powered systems, it needs to be reliable when you need it the most. Wolfspeed Silicon Carbide offers outstanding performance you can trust, even in the most demanding applications and in the most extreme environments.


Illustrated flow chart showing how Wolfspeed components help convert and store solar energy in a power grid.
Solar Inverter

Improved Reliability, Cleaner Power from Wolfspeed SiC

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications. That’s because Wolfspeed Silicon Carbide offers:
Up To
30%
Lower Losses
Up To
50%
Higher Power Density
Up To
10%
System Cost Savings

Wolfspeed SiC components for solar power

Solar power systems harness the power of the sun with minimal losses to deliver maximum performance. These Wolfspeed Silicon Carbide products are up for the challenge:

Discrete Silicon Carbide MOSFETs for Wind Power

View All Discrete SiC MOSFETs
Product SKU
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Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
C3M0016120D
1200 V
16 mΩ
Gen 3
115 A
207 nC
230 pF
556 W
175 °C
TO-247-3
1200 V
16 mΩ
Gen 3
115 A
211 nC
230 pF
556 W
175 °C
TO-247-4
1200 V
21 mΩ
Gen 3
81 A
160 nC
180 pF
469 W
175 °C
TO-247-3
1200 V
21 mΩ
Gen 3
100 A
162 nC
180 pF
469 W
175 °C
TO-247-4
1200 V
32 mΩ
Gen 3
63 A
114 nC
129 pF
283 W
175 °C
TO-247-3
1200 V
32 mΩ
Gen 3
68 A
111 nC
133 pF
277 W
150 °C
TO-263-7
1200 V
32 mΩ
Gen 3
63 A
118 nC
129 pF
283 W
175 °C
TO-247-4
1200 V
40 mΩ
Gen 3
66 A
101 nC
103 pF
326 W
175 °C
TO-247-3
1200 V
40 mΩ
Gen 3
66 A
99 nC
103 pF
326 W
175 °C
TO-247-4
1200 V
75 mΩ
Gen 3
30 A
54 nC
58 pF
113.6 W
150 °C
TO-247-3
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-263-7
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-247-4
1200 V
160 mΩ
Gen 3
17 A
38 nC
39 pF
97 W
150 °C
TO-247-3
1200 V
160 mΩ
Gen 3
17 A
24 nC
39 pF
90 W
150 °C
TO-263-7
1200 V
350 mΩ
Gen 3
7.6 A
19 nC
20 pF
50 W
150 °C
TO-247-3
1200 V
350 mΩ
Gen 3
7.2 A
13 nC
20 pF
40.8 W
150 °C
TO-263-7
1700 V
45 mΩ
Gen 2
72 A
188 nC
171 pF
520 W
150 °C
TO-247-3
1700 V
45 mΩ
Gen 2
72 A
188 nC
171 pF
520 W
150 °C
TO-247-4 Plus
1700 V
1000 mΩ
Gen 2
5 A
22 nC
19 pF
69 W
150 °C
TO-247-3
1700 V
1000 mΩ
Gen 2
5.3 A
13 nC
12 pF
78 W
150 °C
TO-263-7
1700 V
80 mΩ
Gen 2
40 A
120 nC
105 pF
277 W
150 °C
TO-247-4 Plus

1200V Discrete Silicon Carbide Schottky Diodes for Solar Power

Product SKU
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Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
CAD Model
1200 V
2 A
Gen 4
1.4 V
2 A
11 nC
60 W
TO-220-2
1200 V
2 A
Gen 4
1.4 V
2 A
11 nC
52 W
TO-252-2
1200 V
2 A
Gen 4
1.4 V
2 A
16 nC
50 W
TO-252-2
1200 V
5 A
Gen 4
1.4 V
5 A
27 nC
81 W
TO-220-2
1200 V
5 A
Gen 4
1.4 V
5 A
27 nC
97 W
TO-252-2
1200 V
8 A
Gen 4
1.5 V
8 A
37 nC
120 W
TO-220-2
1200 V
8 A
Gen 4
1.5 V
8 A
37 nC
137 W
TO-252-2
1200 V
10 A
Gen 4
1.5 V
10 A
56 nC
166 W
TO-220-2
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC
136 W
TO-220-2
1200 V
10 A
Gen 4
1.4 V
10 A
54 nC
187 W
TO-247-3
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC per leg
170 W
TO-252-2
1200 V
10 A
Gen 4
1.4 V
10 A
52 nC
136 W
TO-247-2
1200 V
15 A
Gen 4
1.6 V
15 A
77.5 nC
192 W
TO-220-2
1200 V
15 A
Gen 4
1.5 V
15 A
37 nC per leg
270 W
TO-247-3
1200 V
15 A
Gen 4
1.5 V
15 A
77.5 nC
174.5 W
TO-247-2
1200 V
20 A
Gen 4
1.5 V
20 A
52 nC per leg
176 W
TO-247-3
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
1200 V
20 A
Gen 4
1.5 V per leg
20 A
52 nC per leg
352 W
TO-247-3
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
246 W
TO-247-2
1200 V
20 A
Gen 4
1.5 V
20 A
110 nC
250 W
TO-263-2
C4D30120H
New
1200 V
30 A
Gen 4
1.5 V
30 A
152 nC
441 W
TO-247-2
1200 V
30 A
Gen 4
1.6 V per leg
30 A
77.5 nC per leg
440 W
TO-247-3
1200 V
40 A
Gen 4
1.5 V
40 A
167 nC
667 W
TO-247-2
1200 V
40 A
Gen 4
1.5 V per leg
40 A
99 nC per leg
532 W
TO-247-3

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family for Solar Power

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
GM3
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
194 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half-Bridge
1200 V
146 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM3
Half-Bridge
1200 V
105 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Half-Bridge
1200 V
78 A
16 mΩ
Gen 3 MOS
150 °C
FM3
Six-pack (three-phase)
1200 V
51 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Six-pack (three-phase)
1200 V
40 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules for Solar Power

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
62mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
62mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
62mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
62mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
62mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
175 °C
106 x 62 x 30 mm
62mm
Half-Bridge
1200 V
530 A
2.67 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
62mm
Half-Bridge
1200 V
530 A
2.67 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm

XM3 Half-Bridge Silicon Carbide Power Module Family for Solar Power

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
XM3
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm

HM Silicon Carbide Power Module Family for Solar Power

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
HM High Performance 62 mm
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge Right GK for Paralleling
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm

Reference Designs to Accelerate Your Time to Market

Wolfspeed not only offers the solutions to bring your design into the future of automotive technology, but our Reference Designs can help you accelerate your design cycle process. Reference Designs include full system design resource package with schematics, BOM, and more.

Featured Reference Designs for Solar Power

Name
Buy Online
Topology
Status
Package
Designed By
Product SKU
View Product
AC to DC
Paper Design Only
FM3
Wolfspeed
CRD25AD12N-FMC
DC to DC
Paper Design Only
TO-247-4
Wolfspeed
CRD-60DD12N
DC to AC
Available for Purchase
XM3
Wolfspeed
CRD200DA12E-XM3
DC to AC
Available for Purchase
XM3
Wolfspeed
CRD250DA12E-XM3
DC to AC
Available for Purchase
XM3
Wolfspeed
CRD300DA12E-XM3
DC to AC
Available for Purchase
XM3
Wolfspeed
CRD600DA12E-XM3

Wolfspeed: Disruptive by Design

From its inception, Wolfspeed has been focused on the future, and that Silicon Carbide power is the technology that can bring your business forward.

Wolfspeed has more 30 years of experience in Silicon Carbide power and 7+ trillion installed field hours. We have invested in the future of Silicon Carbide technology and are expanding our capacity thirtyfold to support your business’s growth. With more than 20 years of diode and MOSFET production, we are equipped to supply the components that enable the future of Solar Power.

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Silicon Carbide

In The Studio: Challenges and Solutions in Scaling Up Silicon Carbide Production

Silicon Carbide raises the bar for what the world’s innovators can achieve, but there are unique challenges to producing it in high volume. Join Guy Moxey and Cengiz Balkas, Wolfspeed Materials Senior VP & GM, for a look at how Wolfspeed’s first-hand experience has made us an industry leader in the production of high-quality Silicon Carbide.
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