Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
60 kW Interleaved Boost Converter
CRD-60DD12N
This reference design demonstrates the application of Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter. This topology is ideal for high efficiency solar power generation systems to boost the output voltage of the solar panel to a consistent DC bus voltage, which can be fed into a grid-tied inverter. The design uses parallel Silicon Carbide MOSFETs and parallel Silicon Carbide Schottky diodes to achieve a high-power density using discrete devices. The TO-247-4 package with a Kelvin source pin enables high frequency switching with reduced losses compared to 3-lead devices.
Knowledge Center
As AI scales, a greater lens is on the upstream power sources that are expected to keep up with rapidly expanding data center deployments. Amperesand is helping build the cornerstone of tomorrow’s grid by developing highly reliable, medium voltage (MV) SiC-based solid state transformers. Read more to learn how Amperesand and Wolfspeed partnered to make it happen.
