This reference design demonstrates the application of Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter. This topology is ideal for high efficiency solar power generation systems to boost the output voltage of the solar panel to a consistent DC bus voltage, which can be fed into a grid-tied inverter. The design uses parallel Silicon Carbide MOSFETs and parallel Silicon Carbide Schottky diodes to achieve a high-power density using discrete devices. The TO-247-4 package with a Kelvin source pin enables high frequency switching with reduced losses compared to 3-lead devices.
Specifications
Input Voltage: 470-800V DC
Output Voltage: 850V DC
Power Max: 60 kW
Switching Frequency: 78kHz
Peak Efficiency: 99.5%
Power Density: 127W/in3
Applications
Solar boost converter
What's Included
Complete design files including schematic, PCB layout and BOM
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